2SK2051-S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FUJI POWER MOSFET2SK2051-L,SN-CHANNEL SILICON POWER MOSFETF-II SERIESFeatures Outline DrawingsHigh speed switchingT-Pack(L) T-Pack(S)Low on-resistanceNo secondary breakdown10+0.50.24.5Low driving power1.32High voltageVGS=30V Guarantee+0.20.2Applications1.2 0.10.80.4+0.2Switching regulators2.75.08UPS1. Gate2, 4. Drain DC-DC convert

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2053N-CHANNEL MOSFET FOR HIGH-SPEED SWITCHING DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK2053 is an N-channel vertical MOS FET. Because it 5.7 0.1can be driven by a voltage as low as 1.5 V and it is not 2.0 0.2 1.5 0.1necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems su

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2054N-CHANNEL MOS FETFOR HIGH-SPEED SWITCHINGThe 2SK2054 is a N-channel MOS FET of a vertical type andPACKAGE DIMENSIONS (in mm)is a switching element that can be directly driven by the output of5.7 0.1an IC operating at 5 V.2.0 0.2 1.5 0.1This product has a low ON resistance and superb switchingcharacteristics and is ideal f

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2055N-CHANNEL MOS FETFOR HIGH-SPEED SWITCHINGThe 2SK2055 is a N-channel MOS FET of a vertical type andPACKAGE DIMENSIONS (in mm)is a switching element that can be directly driven by the output of5.7 0.1an IC operating at 5 V.2.0 0.2 1.5 0.1This product has a low ON resistance and superb switchingcharacteristics and is ideal f

Ordering number:ENN4315N-Channel Silicon MOSFET2SK2058Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2056A Low-voltage drive.[2SK2058]15.63.24.814.02.01.62.00.61.01 2 31 : Gate0.62 : Drain3 : Source5.45 5.45 SANYO : TO-3PBSpecificationsAbsolute Maximum Ratings at

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

N-channel MOS-FET2SK2050F-III Series 100V 0,055 30A 80W> Features > Outline Drawing- High Current- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Forward Transconductance> Applications- Motor Control- General Purpose Power Amplifier- DC-DC converters> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C),

isc N-Channel MOSFET Transistor 2SK2052DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor controlDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALU

isc N-Channel MOSFET Transistor 2SK2050DESCRIPTIONDrain Current I = 30A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor controlDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER V

isc N-Channel MOSFET Transistor 2SK2057DESCRIPTIONDrain Current I = 20A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dra

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2056 DESCRIPTION Drain Current ID= 4A@ TC=25 Drain Source Voltage- : VDSS= 800V(Min) Fast Switching Speed APPLICATIONS Switching regulators General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 80