LSB65R099GT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LSB65R099GT
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 278 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 40 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
Qgⓘ - Carga de la puerta: 66 nC
trⓘ - Tiempo de subida: 43.8 nS
Cossⓘ - Capacitancia de salida: 2500 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.099 Ohm
Encapsulados: TO-247
Búsqueda de reemplazo de LSB65R099GT MOSFET
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LSB65R099GT datasheet
lsb65r099gt lsd65r099gt lse65r099gt.pdf
LSB65R099GT/LSD65R099GT/LSE65R099GT LonFET Lonten N-channel 650V, 40A, 0.099 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 0.099 device has extremely low on resistance, making it IDM 120A especially suitable for applications which require Qg,typ 66nC
lsb65r099gf lsd65r099gf lse65r099gf.pdf
LSB65R099GF/LSD65R099GF/LSE65R099GF LonFET Lonten N-channel 650V, 40A, 0.099 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 700V DS j,max advanced super junction technology. The resulting R 0.099 DS(on),max device has extremely low on resistance, making it I 120A DM especially suitable for applications which require Q 66nC g,typ
lsb65r041gt.pdf
LSB65R041GT LonFET Lonten N-channel 650V, 78A, 0.041 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 0.041 device has extremely low on resistance, making it IDM 230A especially suitable for applications which require Qg,typ 110nC superior power density
lsb65r070gf.pdf
LSB65R070GF LonFET Lonten N-channel 650V, 47A, 0.07 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 0.070 device has extremely low on resistance, making it IDM 141A especially suitable for applications which require Qg,typ 87nC superior power density
Otros transistores... LSB60R170GF , LSB60R170GT , LSB60R180HT , LSB60R280HT , LSB65R041GF , LSB65R041GT , LSB65R070GF , LSB65R099GF , IRF1404 , LSB65R125HT , LSB65R180GF , LSB65R180GT , LSB65R180HT , LSB65R380HT , LSB80R350GT , LSC55R140GF , LSC55R140GT .
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