LSD55R140GT Todos los transistores

 

LSD55R140GT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LSD55R140GT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 34 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 550 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 23 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 27 nS
   Cossⓘ - Capacitancia de salida: 76.2 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm
   Paquete / Cubierta: TO-220F
 

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LSD55R140GT Datasheet (PDF)

 ..1. Size:1326K  lonten
 lsb55r140gt lsd55r140gt lse55r140gt lsf55r140gt lsc55r140gt.pdf pdf_icon

LSD55R140GT

LSB55R140GT/LSD55R140GT/LSE55R140GT/LSF55R140GT/LSC55R140GTLonFETLonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 600VDS j,maxadvanced super junction technology. The resulting R 0.14DS(on),maxdevice has extremely low on resistance, making it I 69ADMespecially suitable for applications which

 ..2. Size:1268K  lonten
 lsb55r140gt lsd55r140gt lse55r140gt lsf55r140gt.pdf pdf_icon

LSD55R140GT

LSB55R140GT/LSD55R140GT/LSE55R140GT/LSF55R140GTLonFETLonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 600VDS j,maxadvanced super junction technology. The resulting R 0.14DS(on),maxdevice has extremely low on resistance, making it I 69ADMespecially suitable for applications which require Q 40n

 4.1. Size:1326K  lonten
 lsb55r140gf lsc55r140gf lsd55r140gf lse55r140gf lsf55r140gf.pdf pdf_icon

LSD55R140GT

LSB55R140GF/LSC55R140GF/LSD55R140GF/LSE55R140GF/LSF55R140GFLonFETLonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 600VDS j,maxadvanced super junction technology. The resulting R 0.14DS(on),maxdevice has extremely low on resistance, making it I 69ADMespecially suitable for applications which

 4.2. Size:1193K  lonten
 lsb55r140gf lsd55r140gf lse55r140gf.pdf pdf_icon

LSD55R140GT

LSB55R140GF/LSD55R140GF/LSE55R140GFLonFETLonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 600VDS j,maxadvanced super junction technology. The resulting R 0.14DS(on),maxdevice has extremely low on resistance, making it I 69ADMespecially suitable for applications which require Q 40nCg,typsu

MOSTRAR MÁS

Otros transistores... LSC70R380GT , LSC70R640GT , LSC80R350GT , LSC80R680GT , LSC80R980GT , LSD50R160HT , LSD55R066GT , LSD55R140GF , 4N60 , LSD60R070HT , LSD60R092GF , LSD60R092GT , LSD60R099HT , LSD60R105HF , LSD60R125HT , LSD60R170GF , LSD60R170GT .

History: OSG65R2K4PF | 2SK2419 | AON6754

 

 
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