LSD60R099HT Todos los transistores

 

LSD60R099HT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LSD60R099HT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 34.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 58 nS
   Cossⓘ - Capacitancia de salida: 106 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.099 Ohm
   Paquete / Cubierta: TO-220F
 

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LSD60R099HT Datasheet (PDF)

 ..1. Size:1047K  lonten
 lsb60r099ht lsd60r099ht lse60r099ht.pdf pdf_icon

LSD60R099HT

LSB60R099HT/LSD60R099HT/LSE60R099HTLonFETLonten N-channel 600V, 40A, 0.099 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.099DS(on),maxdevice has extremely low on resistance, making it I 120ADMespecially suitable for applications which require Q 48nCg,typ

 6.1. Size:934K  lonten
 lsb60r092gf lsd60r092gf lse60r092gf.pdf pdf_icon

LSD60R099HT

LSB60R092GF/LSD60R092GF/LSE60R092GF LonFET Lonten N-channel 600V, 40A, 0.092 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.092 device has extremely low on resistance, making it IDM 120A especially suitable for applications which require Qg,typ 66nC

 6.2. Size:941K  lonten
 lsb60r092gt lsd60r092gt lse60r092gt.pdf pdf_icon

LSD60R099HT

LSB60R092GT/LSD60R092GT/LSE60R092GT LonFET Lonten N-channel 600V, 40A, 0.092 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.092 device has extremely low on resistance, making it IDM 120A especially suitable for applications which require Qg,typ 66nC

 7.1. Size:1049K  lonten
 lsb60r070ht lsd60r070ht.pdf pdf_icon

LSD60R099HT

LSB60R070HT/ LSD60R070HTLonFETLonten N-channel 600V, 47A, 0.07 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.07DS(on),maxdevice has extremely low on resistance, making it I 141ADMespecially suitable for applications which require Q 68nCg,typsuperior pow

MOSTRAR MÁS

Otros transistores... LSC80R980GT , LSD50R160HT , LSD55R066GT , LSD55R140GF , LSD55R140GT , LSD60R070HT , LSD60R092GF , LSD60R092GT , IRLZ44N , LSD60R105HF , LSD60R125HT , LSD60R170GF , LSD60R170GT , LSD60R180HT , LSD60R1K4HT , LSD60R240HT , LSD60R280HT .

History: KRF9640S | QM3007S

 

 
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