LSD60R180HT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LSD60R180HT
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 33 nS
Cossⓘ - Capacitancia de salida: 1250 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
Encapsulados: TO-220F
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LSD60R180HT datasheet
lsb60r180ht lsc60r180ht lsd60r180ht lse60r180ht lsf60r180ht lsnc60r180ht.pdf
LSB60R180HT/ LSC60R180HT/ LSD60R180HT / LSE60R180HT/ LSF60R180HT/LSNC60R180HT LonFET Lonten N-channel 600V, 20A, 0.18 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated VDS @ Tj,max 650V using advanced super junction technology. RDS(on),max 0.18 The resulting device has extremely low on IDM 60A resistance, making it especially suitable fo
lsb60r105hf lsd60r105hf lse60r105hf lsc60r105hf.pdf
LSB60R105HF/LSD60R105HF/ LSE60R105HF/LSC60R105HF LonFET Lonten N-channel 600V, 40A, 0.105 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 650V DS j,max advanced super junction technology. The resulting R 0.105 DS(on),max device has extremely low on resistance, making it I 120A DM especially suitable for applications which require
lsb60r125ht lsc60r125ht lsd60r125ht lse60r125ht.pdf
LSB60R125HT/LSC60R125HT/LSD60R125HT/LSE60R125HT LonFET Lonten N-channel 600V, 25A, 0.125 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.125 device has extremely low on resistance, making it IDM 75A especially suitable for applications which require Qg
lsb60r170gt lsd60r170gt.pdf
LSB60R170GT/ LSD60R170GT LonFET Lonten N-channel 600V, 20A, 0.17 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.17 device has extremely low on resistance, making it IDM 60A especially suitable for applications which require Qg,typ 39nC superior pow
Otros transistores... LSD60R070HT , LSD60R092GF , LSD60R092GT , LSD60R099HT , LSD60R105HF , LSD60R125HT , LSD60R170GF , LSD60R170GT , STP80NF70 , LSD60R1K4HT , LSD60R240HT , LSD60R280HT , LSD60R290HF , LSD60R380HT , LSD60R650HT , LSD65R099GF , LSD65R099GT .
History: JFAM20N50C | FS10VS-9
History: JFAM20N50C | FS10VS-9
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