LSD65R105HF Todos los transistores

 

LSD65R105HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LSD65R105HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 34.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 59.2 nS
   Cossⓘ - Capacitancia de salida: 104 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.105 Ohm
   Paquete / Cubierta: TO-220F
     - Selección de transistores por parámetros

 

LSD65R105HF Datasheet (PDF)

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lsd65r105hf.pdf pdf_icon

LSD65R105HF

LSD65R105HFLonFETLonten N-channel 650V, 40A, 0.105 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.105DS(on),maxdevice has extremely low on resistance, making it I 120ADMespecially suitable for applications which require Q 49.8nCg,typsuperior power densit

 7.1. Size:1188K  lonten
lsb65r180gf lsc65r180gf lsd65r180gf lse65r180gf lsf65r180gf.pdf pdf_icon

LSD65R105HF

LSB65R180GF/ LSC65R180GF/ LSD65R180GF/ LSE65R180GF/ LSF65R180GFLonFETLonten N-channel 650V, 20A, 0.18 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated V @ T 700VDS j,maxusing advanced super junction technology. R 0.18DS(on),maxThe resulting device has extremely low on I 60ADMresistance, making it especially suitable for Q 39nCg,typa

 7.2. Size:1176K  lonten
lsd65r1k5ht lsg65r1k5ht lsh65r1k5ht lse65r1k5ht lss65r1k5ht.pdf pdf_icon

LSD65R105HF

LSD65R1K5HT/LSG65R1K5HT/ LSH65R1K5HT/ LSE65R1K5HT/ LSS65R1K5HTLonFETLonten N-channel 650V, 3A, 1.5 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 1.5DS(on),maxdevice has extremely low on resistance, making it I 9ADMespecially suitable for applications which re

 7.3. Size:1136K  lonten
lsb65r180gt lsc65r180gt lsd65r180gt lse65r180gt lsf65r180gt.pdf pdf_icon

LSD65R105HF

LSB65R180GT/ LSC65R180GT/ LSD65R180GT/ LSE65R180GT/ LSF65R180GTLonFETLonten N-channel 650V, 20A, 0.18 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated V @ T 700VDS j,maxusing advanced super junction technology. RDS(on),max 0.18I 60AThe resulting device has extremely low on DMQ 39nCresistance, making it especially suitable for g,typapp

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRF6775MTRPBF | HSM3903 | ME4856-G | SVS11N70FJHD2 | MEE3710T | NP88N03KUG | FTK2012

 

 
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