LSD70R1KGT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LSD70R1KGT
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 29 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 VQgⓘ - Carga de la puerta: 13.2 nC
trⓘ - Tiempo de subida: 21 nS
Cossⓘ - Capacitancia de salida: 270 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.08 Ohm
Paquete / Cubierta: TO-220F
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LSD70R1KGT Datasheet (PDF)
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