LSE55R140GT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LSE55R140GT
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 205 W
Voltaje máximo drenador - fuente |Vds|: 550 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 23 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 40 nC
Tiempo de subida (tr): 27 nS
Conductancia de drenaje-sustrato (Cd): 76.2 pF
Resistencia entre drenaje y fuente RDS(on): 0.14 Ohm
Paquete / Cubierta: TO-263
Búsqueda de reemplazo de MOSFET LSE55R140GT
LSE55R140GT Datasheet (PDF)
lsb55r140gt lsd55r140gt lse55r140gt lsf55r140gt lsc55r140gt.pdf
LSB55R140GT/LSD55R140GT/LSE55R140GT/LSF55R140GT/LSC55R140GTLonFETLonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 600VDS j,maxadvanced super junction technology. The resulting R 0.14DS(on),maxdevice has extremely low on resistance, making it I 69ADMespecially suitable for applications which
lsb55r140gt lsd55r140gt lse55r140gt lsf55r140gt.pdf
LSB55R140GT/LSD55R140GT/LSE55R140GT/LSF55R140GTLonFETLonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 600VDS j,maxadvanced super junction technology. The resulting R 0.14DS(on),maxdevice has extremely low on resistance, making it I 69ADMespecially suitable for applications which require Q 40n
lsb55r140gf lsc55r140gf lsd55r140gf lse55r140gf lsf55r140gf.pdf
LSB55R140GF/LSC55R140GF/LSD55R140GF/LSE55R140GF/LSF55R140GFLonFETLonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 600VDS j,maxadvanced super junction technology. The resulting R 0.14DS(on),maxdevice has extremely low on resistance, making it I 69ADMespecially suitable for applications which
lsb55r140gf lsd55r140gf lse55r140gf.pdf
LSB55R140GF/LSD55R140GF/LSE55R140GFLonFETLonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 600VDS j,maxadvanced super junction technology. The resulting R 0.14DS(on),maxdevice has extremely low on resistance, making it I 69ADMespecially suitable for applications which require Q 40nCg,typsu
lsb55r066gt lsd55r066gt lse55r066gt.pdf
LSB55R066GT/LSD55R066GT/LSE55R066GT LonFET Lonten N-channel 550V, 45A, 0.066 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 600V advanced super junction technology. The resulting RDS(on),max 0.066 device has extremely low on resistance, making it IDM 135A especially suitable for applications which require Qg,typ 63.5 n
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
