LSE60R105HF Todos los transistores

 

LSE60R105HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LSE60R105HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 248 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 58.6 nS

Cossⓘ - Capacitancia de salida: 104 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.105 Ohm

Encapsulados: TO-263

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LSE60R105HF datasheet

 ..1. Size:1094K  lonten
 lsb60r105hf lsd60r105hf lse60r105hf lsc60r105hf.pdf pdf_icon

LSE60R105HF

LSB60R105HF/LSD60R105HF/ LSE60R105HF/LSC60R105HF LonFET Lonten N-channel 600V, 40A, 0.105 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 650V DS j,max advanced super junction technology. The resulting R 0.105 DS(on),max device has extremely low on resistance, making it I 120A DM especially suitable for applications which require

 7.1. Size:987K  lonten
 lsb60r125ht lsc60r125ht lsd60r125ht lse60r125ht.pdf pdf_icon

LSE60R105HF

LSB60R125HT/LSC60R125HT/LSD60R125HT/LSE60R125HT LonFET Lonten N-channel 600V, 25A, 0.125 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.125 device has extremely low on resistance, making it IDM 75A especially suitable for applications which require Qg

 7.2. Size:1125K  lonten
 lsb60r180ht lsc60r180ht lsd60r180ht lse60r180ht lsf60r180ht lsnc60r180ht.pdf pdf_icon

LSE60R105HF

LSB60R180HT/ LSC60R180HT/ LSD60R180HT / LSE60R180HT/ LSF60R180HT/LSNC60R180HT LonFET Lonten N-channel 600V, 20A, 0.18 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated VDS @ Tj,max 650V using advanced super junction technology. RDS(on),max 0.18 The resulting device has extremely low on IDM 60A resistance, making it especially suitable fo

 7.3. Size:1103K  lonten
 lsd60r1k4ht lsg60r1k4ht lsh60r1k4ht lse60r1k4ht.pdf pdf_icon

LSE60R105HF

LSD60R1K4HT/LSG60R1K4HT/ LSH60R1K4HT/ LSE60R1K4HT LonFET Lonten N-channel 600V, 3A, 1.4 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 650V DS j,max advanced super junction technology. The resulting R 1.4 DS(on),max device has extremely low on resistance, making it I 9A DM especially suitable for applications which require Q 5.8nC

MOSTRAR MÁS

Otros transistores... LSDN65R950HT , LSE50R160HT , LSE55R066GT , LSE55R140GF , LSE55R140GT , LSE60R092GF , LSE60R092GT , LSE60R099HT , AO4468 , LSE60R125HT , LSE60R180HT , LSE60R1K4HT , LSE60R240HT , LSE60R280HT , LSE60R290HF , LSE60R380HT , LSE65R099GF .

History: TPCL4203 | GP1M003A080XG | WM03P41M2 | TK35A65W5 | IRLHS6242PBF | WM03N58M2 | SGT080N055

 

 

 

 

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