STP25N06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STP25N06
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 90 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 25 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 90 nS
Cossⓘ - Capacitancia de salida: 320 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET STP25N06
STP25N06 Datasheet (PDF)
stp25n06.pdf
STP25N06STP25N06FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP25N06 60 V
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isc N-Channel MOSFET Transistor STP25N10F7FEATURESDrain Current I = 25A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.035(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONThese devices utilize the 7th generation of design rules of S
Otros transistores... STP20N10L , STP20N10LFI , STP21N05L , STP21N05LFI , STP21N06L , STP21N06LFI , STP25N05 , STP25N05FI , HY1906P , STP25N06FI , STP2N60 , STP2N60FI , STP2N80 , STP2N80FI , STP30N05 , STP30N05FI , STP30N06 .
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