LSG65R290HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LSG65R290HF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 130 W
Voltaje máximo drenador - fuente |Vds|: 650 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 15 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 18.9 nC
Tiempo de subida (tr): 39 nS
Conductancia de drenaje-sustrato (Cd): 41.5 pF
Resistencia entre drenaje y fuente RDS(on): 0.29 Ohm
Paquete / Cubierta: TO-252
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LSG65R290HF Datasheet (PDF)
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LSD65R280HT/LSG65R280HT/LSH65R280HT/LSF65R280HT/ LSE65R280HTLonFETLonten N-channel 650V, 15A, 0.28 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.28DS(on),maxdevice has extremely low on resistance, making it I 45ADMespecially suitable for applications which
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