LSG65R570GT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LSG65R570GT
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 83 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 10 nS
Cossⓘ - Capacitancia de salida: 23 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.57 Ohm
Encapsulados: TO-252
Búsqueda de reemplazo de LSG65R570GT MOSFET
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LSG65R570GT datasheet
..1. Size:1184K lonten
lsc65r570gt lsd65r570gt lsg65r570gt lsh65r570gt lse65r570gt lsf65r570gt.pdf 
LSC65R570GT/LSD65R570GT/LSG65R570GT/ LSH65R570GT/ LSE65R570GT / LSF65R570GT LonFET Lonten N-channel 650V, 7A, 0.57 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 0.57 device has extremely low on resistance, making it IDM 21A especially suitable for ap
8.2. Size:1271K lonten
lsc65r290hf lsg65r290hf lsh65r290hf lsd65r290hf lsf65r290hf lse65r290hf.pdf 
LSC65R290HF/LSG65R290HF/LSH65R290HF/ LSD65R290HF/LSF65R290HF/ LSE65R290HF LonFET Lonten N-channel 650V, 15A, 0.29 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 700V DS j,max advanced super junction technology. The resulting R 0.29 DS(on),max device has extremely low on resistance, making it I 45A DM especially suitable for appli
8.3. Size:1176K lonten
lsd65r1k5ht lsg65r1k5ht lsh65r1k5ht lse65r1k5ht lss65r1k5ht.pdf 
LSD65R1K5HT/LSG65R1K5HT/ LSH65R1K5HT/ LSE65R1K5HT/ LSS65R1K5HT LonFET Lonten N-channel 650V, 3A, 1.5 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 700V DS j,max advanced super junction technology. The resulting R 1.5 DS(on),max device has extremely low on resistance, making it I 9A DM especially suitable for applications which re
8.4. Size:1357K lonten
lsc65r380gt lsd65r380gt lse65r380gt lsf65r380gt lsg65r380gt.pdf 
LSC65R380GT/LSD65R380GT/ LSE65R380GT/LSF65R380GT/LSG65R380GT LonFET Lonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 700V DS j,max advanced super junction technology. The resulting R 0.38 DS(on),max device has extremely low on resistance, making it I 30A DM especially suitable for applications which
8.5. Size:1176K lonten
lsc65r380ht lsd65r380ht lse65r380ht lsf65r380ht lsg65r380ht.pdf 
LSC65R380HT /LSD65R380HT / LSE65R380HT /LSF65R380HT/LSG65R380HT LonFET Lonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 0.38 device has extremely low on resistance, making it IDM 30A especially suitable for applications wh
8.6. Size:1360K lonten
lsc65r380gf lsd65r380gf lse65r380gf lsf65r380gf lsg65r380gf.pdf 
LSC65R380GF/LSD65R380GF/ LSE65R380GF/LSF65R380GF/LSG65R380GF LonFET Lonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 700V DS j,max advanced super junction technology. The resulting R 0.38 DS(on),max device has extremely low on resistance, making it I 30A DM especially suitable for applications which
8.7. Size:1165K lonten
lsd65r930gt lsg65r930gt lsh65r930gt.pdf 
LSD65R930GT/LSG65R930GT/ LSH65R930GT LonFET Lonten N-channel 650V, 4A, 930m LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 700V DS j,max advanced super junction technology. The R 930m DS(on),max resulting device has extremely low on I 12A DM resistance, making it especially suitable for Q 13.6nC g,typ applications which require
8.8. Size:867K lonten
lsg65r2k5gt lsh65r2k5gt.pdf 
LSG65R2K5GT/ LSH65R2K5GT LonFET Lonten N-channel 650V, 2A, 2.5 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 700V DS j,max advanced super junction technology. The resulting R 2.5 DS(on),max device has extremely low on resistance, making it I 5A DM especially suitable for applications which require Q 9.5nC g,typ superior power d
8.9. Size:1285K lonten
lsd65r280ht lsg65r280ht lsh65r280ht lsf65r280ht lse65r280ht lsc65r280ht.pdf 
LSD65R280HT/LSG65R280HT/LSH65R280HT /LSF65R280HT/LSE65R280HT/LSC65R280HT LonFET Lonten N-channel 650V, 15A, 0.28 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 700V DS j,max advanced super junction technology. The resulting R 0.28 DS(on),max device has extremely low on resistance, making it I 45A DM especially suitable for applic
8.10. Size:1447K lonten
lsc65r650ht lsd65r650ht lsdn65r650ht lse65r650ht lsg65r650ht lsh65r650ht.pdf 
LSC65R650HT/LSD65R650HT/ LSDN65R650HT / LSE65R650HT/LSG65R650HT/LSH65R650HT LonFET Lonten N-channel 650V, 7A, 0.65 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 700V DS j,max advanced super junction technology. The resulting R 0.65 DS(on),max device has extremely low on resistance, making it I 21A DM especially suitable for appl
8.11. Size:1444K lonten
lsc65r380gt lsd65r380gt lsh65r380gt lse65r380gt lsf65r380gt lsg65r380gt.pdf 
LSC65R380GT/LSD65R380GT/LSH65R380GT/ LSE65R380GT/LSF65R380GT/LSG65R380GT LonFET Lonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 700V DS j,max advanced super junction technology. The resulting R 0.38 DS(on),max device has extremely low on resistance, making it I 30A DM especially suitable for applic
8.12. Size:1258K lonten
lsd65r280ht lsg65r280ht lsh65r280ht lsf65r280ht lse65r280ht.pdf 
LSD65R280HT/LSG65R280HT/LSH65R280HT/LSF65R280HT/ LSE65R280HT LonFET Lonten N-channel 650V, 15A, 0.28 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 700V DS j,max advanced super junction technology. The resulting R 0.28 DS(on),max device has extremely low on resistance, making it I 45A DM especially suitable for applications which
8.13. Size:973K lonten
lsdn65r950ht lsg65r950ht lsh65r950ht.pdf 
LSDN65R950HT/LSG65R950HT/ LSH65R950HT LonFET Lonten N-channel 650V, 4A, 950m LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 950m device has extremely low on resistance, making it IDM 12A especially suitable for applications which require Qg,typ 7.6nC
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History: LSG65R380HT
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