LSG80R680GT Todos los transistores

 

LSG80R680GT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LSG80R680GT

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 30 nS

Cossⓘ - Capacitancia de salida: 26 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.68 Ohm

Encapsulados: TO-252

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LSG80R680GT datasheet

 ..1. Size:1396K  lonten
lsc80r680gt lsd80r680gt lse80r680gt lsf80r680gt lsg80r680gt lsh80r680gt.pdf pdf_icon

LSG80R680GT

LSC80R680GT/LSD80R680GT/LSE80R680GT/ LSF80R680GT/LSG80R680GT/LSH80R680GT LonFET Lonten N-channel 800V, 8A, 0.68 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 850V DS j,max advanced super junction technology. The resulting R 0.68 DS(on),max device has extremely low on resistance, making it I 8A DM especially suitable for applicat

 8.1. Size:912K  lonten
lsg80r2k8gt lsh80r2k8gt.pdf pdf_icon

LSG80R680GT

LSG80R2K8GT/ LSH80R2K8GT LonFET Lonten N-channel 800V, 2A, 2.8 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 850V DS j,max advanced super junction technology. The resulting R 2.8 DS(on),max device has extremely low on resistance, making it I 5A DM especially suitable for applications which require Q 7.7nC g,typ superior power d

 8.2. Size:1307K  lonten
lsc80r980gt lsd80r980gt lse80r980gt lsf80r980gt lsg80r980gt lsh80r980gt.pdf pdf_icon

LSG80R680GT

LSC80R980GT/LSD80R980GT/LSE80R980GT/ LSF80R980GT/LSG80R980GT/LSH80R980GT LonFET Lonten N-channel 800V, 5A, 0.98 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 850V DS j,max advanced super junction technology. The resulting R 0.98 DS(on),max device has extremely low on resistance, making it I 5A DM especially suitable for applicat

Otros transistores... LSG65R650HT , LSG65R930GT , LSG65R950HT , LSG70R1KGT , LSG70R380GT , LSG70R450GT , LSG70R640GT , LSG80R2K8GT , 2N60 , LSG80R980GT , LSGC03R020 , LSGC04R025 , LSGC04R029 , LSGC04R035 , LSGC06R034W3 , LSGC085R041W3 , LSGC085R065W3 .

History: IXFH30N60Q | IPA60R450E6

 

 

 


History: IXFH30N60Q | IPA60R450E6

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