STP2N80 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STP2N80
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 90 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 2.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 31 nC
trⓘ - Tiempo de subida: 42 nS
Cossⓘ - Capacitancia de salida: 55 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 7 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET STP2N80
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Otros transistores... STP21N06L , STP21N06LFI , STP25N05 , STP25N05FI , STP25N06 , STP25N06FI , STP2N60 , STP2N60FI , 75N75 , STP2N80FI , STP30N05 , STP30N05FI , STP30N06 , STP30N06FI , STP32N05L , STP32N05LFI , STP32N06L .
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