LSGH04R028 Todos los transistores

 

LSGH04R028 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LSGH04R028

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 57.6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 18 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 2130 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm

Encapsulados: TO-251

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LSGH04R028 datasheet

 ..1. Size:771K  lonten
 lsgg04r028 lsgh04r028.pdf pdf_icon

LSGH04R028

LSGG04R028/LSGH04R028 Lonten N-channel 40V, 120A, 2.8m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 40V DSS effect transistors are using split gate trench DMOS R GS DS(on),max@ V =10V 2.8m technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance, provide superior switching performance, and

 5.1. Size:1070K  lonten
 lsgc04r029 lsgg04r029 lsgh04r029 lsgn04r029.pdf pdf_icon

LSGH04R028

LSGC04R029/LSGG04R029/LSGH04R029/LSGN04R029 Lonten N-channel 40V, 120A, 2.9m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 40V DSS effect transistors are using split gate trench DMOS R GS DS(on),max@ V =10V 2.9m technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance, provide superior swit

 6.1. Size:933K  lonten
 lsgc04r035 lsgd04r035 lsge04r035 lsgg04r035 lsgh04r035 lsgn04r035.pdf pdf_icon

LSGH04R028

LSGC04R035/LSGD04R035/LSGE04R035/ LSGG04R035/LSGH04R035/LSGN04R035 Lonten N-channel 40V, 120A, 3.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 40V DSS effect transistors are using split gate trench DMOS R GS DS(on),max@ V =10V 3.5m technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance

 9.1. Size:765K  lonten
 lsgh08r060w3 lsgg08r060w3.pdf pdf_icon

LSGH04R028

LSGH08R060W3/LSGG08R060W3 Lonten N-channel 85V, 80A, 6.0m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 85V DSS effect transistors are using split gate trench DMOS R GS DS(on).max@ V =10V 6.0m technology. This advanced technology has been I 80A D especially tailored to minimize on-state resistance, provide superior switching performance, a

MOSTRAR MÁS

Otros transistores... LSGG03R020 , LSGG04R028 , LSGG04R029 , LSGG04R035 , LSGG06R034W3 , LSGG06R098W3 , LSGG08R060W3 , LSGG10R085W3 , IRF3205 , LSGH04R029 , LSGH04R035 , LSGH08R060W3 , LSGH10R085W3 , LSGN03R020 , LSGN04R025 , LSGN04R029 , LSGN04R035 .

 

 

 

 

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