LSGH04R028 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LSGH04R028
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 57.6 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 18 V
Corriente continua de drenaje |Id|: 120 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de subida (tr): 4 nS
Conductancia de drenaje-sustrato (Cd): 2130 pF
Resistencia entre drenaje y fuente RDS(on): 0.0028 Ohm
Paquete / Cubierta: TO-251
Búsqueda de reemplazo de MOSFET LSGH04R028
LSGH04R028 Datasheet (PDF)
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