LSGH08R060W3 Todos los transistores

 

LSGH08R060W3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LSGH08R060W3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 96 W
   Voltaje máximo drenador - fuente |Vds|: 85 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 80 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tiempo de subida (tr): 38.9 nS
   Conductancia de drenaje-sustrato (Cd): 888 pF
   Resistencia entre drenaje y fuente RDS(on): 0.006 Ohm
   Paquete / Cubierta: TO-251

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LSGH08R060W3 Datasheet (PDF)

 ..1. Size:765K  lonten
lsgh08r060w3 lsgg08r060w3.pdf

LSGH08R060W3
LSGH08R060W3

LSGH08R060W3/LSGG08R060W3Lonten N-channel 85V, 80A, 6.0m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 85VDSSeffect transistors are using split gate trench DMOS R GSDS(on).max@ V =10V 6.0mtechnology. This advanced technology has been I 80ADespecially tailored to minimize on-state resistance,provide superior switching performance, a

 9.1. Size:771K  lonten
lsgg04r028 lsgh04r028.pdf

LSGH08R060W3
LSGH08R060W3

LSGG04R028/LSGH04R028Lonten N-channel 40V, 120A, 2.8m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using split gate trench DMOS R GSDS(on),max@ V =10V 2.8mtechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior switching performance, and

 9.2. Size:933K  lonten
lsgc04r035 lsgd04r035 lsge04r035 lsgg04r035 lsgh04r035 lsgn04r035.pdf

LSGH08R060W3
LSGH08R060W3

LSGC04R035/LSGD04R035/LSGE04R035/LSGG04R035/LSGH04R035/LSGN04R035Lonten N-channel 40V, 120A, 3.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using split gate trench DMOS R GSDS(on),max@ V =10V 3.5mtechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance

 9.3. Size:1070K  lonten
lsgc04r029 lsgg04r029 lsgh04r029 lsgn04r029.pdf

LSGH08R060W3
LSGH08R060W3

LSGC04R029/LSGG04R029/LSGH04R029/LSGN04R029Lonten N-channel 40V, 120A, 2.9m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using split gate trench DMOS R GSDS(on),max@ V =10V 2.9mtechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior swit

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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