LSGN04R035 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LSGN04R035
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 85.8 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4.5 nS
Cossⓘ - Capacitancia de salida: 639 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm
Encapsulados: PPAK5X6
Búsqueda de reemplazo de LSGN04R035 MOSFET
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LSGN04R035 datasheet
lsgc04r035 lsgd04r035 lsge04r035 lsgg04r035 lsgh04r035 lsgn04r035.pdf
LSGC04R035/LSGD04R035/LSGE04R035/ LSGG04R035/LSGH04R035/LSGN04R035 Lonten N-channel 40V, 120A, 3.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 40V DSS effect transistors are using split gate trench DMOS R GS DS(on),max@ V =10V 3.5m technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance
lsgn04r025.pdf
LSGN04R025/LSGC04R025 Lonten N-channel 40V, 120A, 2.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 40V DSS effect transistors are using split gate trench DMOS R GS DS(on),max@ V =10V 2.5m technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance, provide superior switching performance, and
lsgn04r029.pdf
LSGC04R029/LSGG04R029/LSGH04R029/LSGN04R029 Lonten N-channel 40V, 120A, 2.9m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 40V DSS effect transistors are using split gate trench DMOS R GS DS(on),max@ V =10V 2.9m technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance, provide superior swit
lsgn04r025 lsgc04r025.pdf
LSGN04R025/LSGC04R025 Lonten N-channel 40V, 120A, 2.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 40V DSS effect transistors are using split gate trench DMOS R GS DS(on),max@ V =10V 2.5m technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance, provide superior switching performance, and
Otros transistores... LSGH04R028 , LSGH04R029 , LSGH04R035 , LSGH08R060W3 , LSGH10R085W3 , LSGN03R020 , LSGN04R025 , LSGN04R029 , IRFZ44 , LSGN06R034W3 , LSGN06R098W3 , LSGN085R065W3 , LSGN10R085W3 , LSH50R160HT , LSH60R1K4HT , LSH60R240HT , LSH60R280HT .
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