LSGN06R098W3 Todos los transistores

 

LSGN06R098W3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LSGN06R098W3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 106 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 65 nS
   Cossⓘ - Capacitancia de salida: 310 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0098 Ohm
   Paquete / Cubierta: DFN5X6
 

 Búsqueda de reemplazo de LSGN06R098W3 MOSFET

   - Selección ⓘ de transistores por parámetros

 

LSGN06R098W3 Datasheet (PDF)

 ..1. Size:917K  1
 lsgn06r098w3.pdf pdf_icon

LSGN06R098W3

LSGG06R098W3/LSGN06R098W3Lonten N-channel 60V, 80A, 9.8m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using split gate trench DMOS RDS(on).max@ V =10V 9.8mGStechnology. This advanced technology has been I 80ADespecially tailored to minimize on-state resistance,provide superior switching performance,

 ..2. Size:911K  lonten
 lsgg06r098w3 lsgn06r098w3.pdf pdf_icon

LSGN06R098W3

LSGG06R098W3/LSGN06R098W3Lonten N-channel 60V, 80A, 9.8m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using split gate trench DMOS RDS(on).max@ V =10V 9.8mGStechnology. This advanced technology has been I 80ADespecially tailored to minimize on-state resistance,provide superior switching performance,

 6.1. Size:813K  lonten
 lsgc06r034w3 lsge06r034w3 lsgn06r034w3 lsgg06r034w3.pdf pdf_icon

LSGN06R098W3

LSGC06R034W3\LSGE06R034W3\LSGN06R034W3\LSGG06R034W3Lonten N-channel 60 V, 80 A, 3.4m Power MOSFETFeatures Product SummaryVDS 60V Extremely low on-resistance RDS(on)RDS(on)@10V typ 2.8m Excellent Q xR product(FOM)g DS(on)RDS(on)@4.5V typ 3.6m Qualified according to JEDEC criteriaID 80AApplications Synchronous Rectification for AC/DC QuickCharger1

 9.1. Size:1291K  1
 lsgn085r065w3.pdf pdf_icon

LSGN06R098W3

LSGC085R065W3\LSGE085R065W3\LSGN085R065W3Lonten N-channel 85 V, 80A, 6.5m Power MOSFETFeatures Product SummaryVDS 85V Extremely low on-resistance RDS(on)RDS(on) 6.5m Excellent Q xR product(FOM)g DS(on)ID 80A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested10

MOSTRAR MÁS

Otros transistores... LSGH04R035 , LSGH08R060W3 , LSGH10R085W3 , LSGN03R020 , LSGN04R025 , LSGN04R029 , LSGN04R035 , LSGN06R034W3 , IRF1404 , LSGN085R065W3 , LSGN10R085W3 , LSH50R160HT , LSH60R1K4HT , LSH60R240HT , LSH60R280HT , LSH60R290HF , LSH60R2K5HT .

History: STU60N3LH5 | BSC072N04LD | SM3106NSU | AM6411P | IRF7484Q | CHM6601JGP | IXTY1N80

 

 
Back to Top

 


 
.