LSGN06R098W3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LSGN06R098W3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 106 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 VQgⓘ - Carga de la puerta: 16.5 nC
trⓘ - Tiempo de subida: 65 nS
Cossⓘ - Capacitancia de salida: 310 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0098 Ohm
Paquete / Cubierta: DFN5X6
Búsqueda de reemplazo de MOSFET LSGN06R098W3
LSGN06R098W3 Datasheet (PDF)
lsgn06r098w3.pdf
LSGG06R098W3/LSGN06R098W3Lonten N-channel 60V, 80A, 9.8m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using split gate trench DMOS RDS(on).max@ V =10V 9.8mGStechnology. This advanced technology has been I 80ADespecially tailored to minimize on-state resistance,provide superior switching performance,
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LSGG06R098W3/LSGN06R098W3Lonten N-channel 60V, 80A, 9.8m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using split gate trench DMOS RDS(on).max@ V =10V 9.8mGStechnology. This advanced technology has been I 80ADespecially tailored to minimize on-state resistance,provide superior switching performance,
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lsgn04r025 lsgc04r025.pdf
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lsgn03r020 lsgg03r020 lsgc03r020.pdf
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lsgc04r029 lsgg04r029 lsgh04r029 lsgn04r029.pdf
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