LSH60R280HT Todos los transistores

 

LSH60R280HT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LSH60R280HT

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 130 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 15 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 56 nS

Cossⓘ - Capacitancia de salida: 41.8 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm

Encapsulados: TO-251

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LSH60R280HT datasheet

 ..1. Size:1293K  lonten
 lsd60r280ht lsg60r280ht lsh60r280ht lsf60r280ht lse60r280ht lsb60r280ht.pdf pdf_icon

LSH60R280HT

LSD60R280HT/LSG60R280HT/LSH60R280HT/ LSF60R280HT/ LSE60R280HT/ LSB60R280HT LonFET Lonten N-channel 600V, 15A, 0.28 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 650V DS j,max advanced super junction technology. The resulting R 0.28 DS(on),max device has extremely low on resistance, making it I 45A DM especially suitable for appl

 ..2. Size:1336K  lonten
 lsd60r280ht lsg60r280ht lsh60r280ht lsb60r280ht lsf60r280ht lse60r280ht lsc60r280ht.pdf pdf_icon

LSH60R280HT

LSD60R280HT/LSG60R280HT/LSH60R280HT/LSB60R280HT LSF60R280HT/ LSE60R280HT/ LSC60R280HT LonFET Lonten N-channel 600V, 15A, 0.28 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 650V DS j,max advanced super junction technology. The resulting R 0.28 DS(on),max device has extremely low on resistance, making it I 45A DM especially suitab

 ..3. Size:1313K  lonten
 lsd60r280ht lsg60r280ht lsh60r280ht lsf60r280htlse60r280ht lsb60r280ht.pdf pdf_icon

LSH60R280HT

LSD60R280HT/LSG60R280HT/LSH60R280HT/ LSF60R280HT/ LSE60R280HT/ LSB60R280HT LonFET Lonten N-channel 600V, 15A, 0.28 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 650V DS j,max advanced super junction technology. The resulting R 0.28 DS(on),max device has extremely low on resistance, making it I 45A DM especially suitable for appl

 7.1. Size:910K  lonten
 lsg60r2k5ht lsh60r2k5ht.pdf pdf_icon

LSH60R280HT

LSG60R2K5HT/ LSH60R2K5HT LonFET Lonten N-channel 600V, 1.9A, 2.5 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 650V DS j,max advanced super junction technology. The resulting R 2.5 DS(on),max device has extremely low on resistance, making it I 5.7A DM especially suitable for applications which require Q 4.7nC g,typ superior pow

MOSTRAR MÁS

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