LSH60R650HT Todos los transistores

 

LSH60R650HT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LSH60R650HT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 63 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 13.1 nC
   trⓘ - Tiempo de subida: 22 nS
   Cossⓘ - Capacitancia de salida: 20.9 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm
   Paquete / Cubierta: TO-251
 

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LSH60R650HT Datasheet (PDF)

 ..1. Size:1295K  lonten
 lsc60r650ht lsd60r650ht lsg60r650ht lsh60r650ht.pdf pdf_icon

LSH60R650HT

LSC60R650HT/LSD60R650HT/LSG60R650HT/LSH60R650HTLonFETLonten N-channel 600V, 7A, 0.65 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.65DS(on),maxdevice has extremely low on resistance, making it I 21ADMespecially suitable for applications which require Q 13.1 n

 8.1. Size:910K  lonten
 lsg60r2k5ht lsh60r2k5ht.pdf pdf_icon

LSH60R650HT

LSG60R2K5HT/ LSH60R2K5HTLonFETLonten N-channel 600V, 1.9A, 2.5 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 2.5DS(on),maxdevice has extremely low on resistance, making it I 5.7ADMespecially suitable for applications which require Q 4.7nCg,typsuperior pow

 8.2. Size:1260K  lonten
 lsd60r380ht lsg60r380ht lsh60r380ht lsf60r380ht lse60r380ht.pdf pdf_icon

LSH60R650HT

LSD60R380HT/LSG60R380HT/LSH60R380HT/LSF60R380HT/ LSE60R380HTLonFETLonten N-channel 600V, 11A, 0.38 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.38DS(on),maxdevice has extremely low on resistance, making it I 30ADMespecially suitable for applications which

 8.3. Size:1293K  lonten
 lsd60r280ht lsg60r280ht lsh60r280ht lsf60r280ht lse60r280ht lsb60r280ht.pdf pdf_icon

LSH60R650HT

LSD60R280HT/LSG60R280HT/LSH60R280HT/LSF60R280HT/ LSE60R280HT/ LSB60R280HTLonFETLonten N-channel 600V, 15A, 0.28 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.28DS(on),maxdevice has extremely low on resistance, making it I 45ADMespecially suitable for appl

MOSTRAR MÁS

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