LSH60R950HT Todos los transistores

 

LSH60R950HT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LSH60R950HT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 7.6 nC
   trⓘ - Tiempo de subida: 27 nS
   Cossⓘ - Capacitancia de salida: 14.1 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.95 Ohm
   Paquete / Cubierta: TO-251

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LSH60R950HT Datasheet (PDF)

 ..1. Size:1001K  lonten
lsdn60r950ht lsg60r950ht lsh60r950ht.pdf

LSH60R950HT
LSH60R950HT

LSDN60R950HT/LSG60R950HT/ LSH60R950HTLonFETLonten N-channel 600V, 4A, 950m LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The R 950mDS(on),maxresulting device has extremely low on I 12ADMresistance, making it especially suitable for Q 7.6nCg,typapplications which require

 8.1. Size:910K  lonten
lsg60r2k5ht lsh60r2k5ht.pdf

LSH60R950HT
LSH60R950HT

LSG60R2K5HT/ LSH60R2K5HTLonFETLonten N-channel 600V, 1.9A, 2.5 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 2.5DS(on),maxdevice has extremely low on resistance, making it I 5.7ADMespecially suitable for applications which require Q 4.7nCg,typsuperior pow

 8.2. Size:1260K  lonten
lsd60r380ht lsg60r380ht lsh60r380ht lsf60r380ht lse60r380ht.pdf

LSH60R950HT
LSH60R950HT

LSD60R380HT/LSG60R380HT/LSH60R380HT/LSF60R380HT/ LSE60R380HTLonFETLonten N-channel 600V, 11A, 0.38 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.38DS(on),maxdevice has extremely low on resistance, making it I 30ADMespecially suitable for applications which

 8.3. Size:1293K  lonten
lsd60r280ht lsg60r280ht lsh60r280ht lsf60r280ht lse60r280ht lsb60r280ht.pdf

LSH60R950HT
LSH60R950HT

LSD60R280HT/LSG60R280HT/LSH60R280HT/LSF60R280HT/ LSE60R280HT/ LSB60R280HTLonFETLonten N-channel 600V, 15A, 0.28 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.28DS(on),maxdevice has extremely low on resistance, making it I 45ADMespecially suitable for appl

 8.4. Size:1336K  lonten
lsd60r280ht lsg60r280ht lsh60r280ht lsb60r280ht lsf60r280ht lse60r280ht lsc60r280ht.pdf

LSH60R950HT
LSH60R950HT

LSD60R280HT/LSG60R280HT/LSH60R280HT/LSB60R280HTLSF60R280HT/ LSE60R280HT/ LSC60R280HTLonFETLonten N-channel 600V, 15A, 0.28 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.28DS(on),maxdevice has extremely low on resistance, making it I 45ADMespecially suitab

 8.5. Size:1103K  lonten
lsd60r1k4ht lsg60r1k4ht lsh60r1k4ht lse60r1k4ht.pdf

LSH60R950HT
LSH60R950HT

LSD60R1K4HT/LSG60R1K4HT/ LSH60R1K4HT/ LSE60R1K4HTLonFETLonten N-channel 600V, 3A, 1.4 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 1.4DS(on),maxdevice has extremely low on resistance, making it I 9ADMespecially suitable for applications which require Q 5.8nC

 8.6. Size:1295K  lonten
lsc60r650ht lsd60r650ht lsg60r650ht lsh60r650ht.pdf

LSH60R950HT
LSH60R950HT

LSC60R650HT/LSD60R650HT/LSG60R650HT/LSH60R650HTLonFETLonten N-channel 600V, 7A, 0.65 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.65DS(on),maxdevice has extremely low on resistance, making it I 21ADMespecially suitable for applications which require Q 13.1 n

 8.7. Size:1313K  lonten
lsd60r280ht lsg60r280ht lsh60r280ht lsf60r280htlse60r280ht lsb60r280ht.pdf

LSH60R950HT
LSH60R950HT

LSD60R280HT/LSG60R280HT/LSH60R280HT/LSF60R280HT/ LSE60R280HT/ LSB60R280HTLonFETLonten N-channel 600V, 15A, 0.28 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.28DS(on),maxdevice has extremely low on resistance, making it I 45ADMespecially suitable for appl

 8.8. Size:1227K  lonten
lsd60r240ht lsg60r240ht lsh60r240ht lsf60r240ht lse60r240ht.pdf

LSH60R950HT
LSH60R950HT

LSD60R240HT/LSG60R240HT/LSH60R240HT/LSF60R240HT/ LSE60R240HTLonFETLonten N-channel 600V, 17A, 0.24 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.24DS(on),maxdevice has extremely low on resistance, making it I 50ADMespecially suitable for applications which

 8.9. Size:1269K  lonten
lsd60r290hf lsg60r290hf lsh60r290hf lsc60r290hf lsf60r290hf lse60r290hf.pdf

LSH60R950HT
LSH60R950HT

LSD60R290HF/LSG60R290HF/LSH60R290HF//LSC60R290HFLSF60R290HF/ LSE60R290HFLonFETLonten N-channel 600V, 15A, 0.29 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.29DS(on),maxdevice has extremely low on resistance, making it I 45ADMespecially suitable for appli

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