LSH80R2K8GT Todos los transistores

 

LSH80R2K8GT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LSH80R2K8GT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 33.7 nS
   Cossⓘ - Capacitancia de salida: 8.78 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.8 Ohm
   Paquete / Cubierta: TO-251
 

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LSH80R2K8GT Datasheet (PDF)

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 lsg80r2k8gt lsh80r2k8gt.pdf pdf_icon

LSH80R2K8GT

LSG80R2K8GT/ LSH80R2K8GTLonFETLonten N-channel 800V, 2A, 2.8 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 850VDS j,maxadvanced super junction technology. The resulting R 2.8DS(on),maxdevice has extremely low on resistance, making it I 5ADMespecially suitable for applications which require Q 7.7nCg,typsuperior power d

 8.1. Size:1396K  lonten
 lsc80r680gt lsd80r680gt lse80r680gt lsf80r680gt lsg80r680gt lsh80r680gt.pdf pdf_icon

LSH80R2K8GT

LSC80R680GT/LSD80R680GT/LSE80R680GT/LSF80R680GT/LSG80R680GT/LSH80R680GTLonFETLonten N-channel 800V, 8A, 0.68 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 850VDS j,maxadvanced super junction technology. The resulting R 0.68DS(on),maxdevice has extremely low on resistance, making it I 8ADMespecially suitable for applicat

 8.2. Size:1307K  lonten
 lsc80r980gt lsd80r980gt lse80r980gt lsf80r980gt lsg80r980gt lsh80r980gt.pdf pdf_icon

LSH80R2K8GT

LSC80R980GT/LSD80R980GT/LSE80R980GT/LSF80R980GT/LSG80R980GT/LSH80R980GTLonFETLonten N-channel 800V, 5A, 0.98 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 850VDS j,maxadvanced super junction technology. The resulting R 0.98DS(on),maxdevice has extremely low on resistance, making it I 5ADMespecially suitable for applicat

Otros transistores... LSH65R380HT , LSH65R570GT , LSH65R650HT , LSH65R930GT , LSH65R950HT , LSH70R1KGT , LSH70R450GT , LSH70R640GT , IRFP260 , LSH80R680GT , LSH80R980GT , LSN65R380HT , LSNC60R180HT , LSNC65R125HT , LSNC65R180HT , LSNC65R380HT , LSS65R1K5HT .

History: KNU4820B | FCP290N80 | STM9435 | AP75N07GP | AOSP36326C | ZXMN10A25K | JCS7N60S

 

 
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