LSH80R2K8GT Todos los transistores

 

LSH80R2K8GT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LSH80R2K8GT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 25 W
   Voltaje máximo drenador - fuente |Vds|: 800 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 2 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tiempo de subida (tr): 33.7 nS
   Conductancia de drenaje-sustrato (Cd): 8.78 pF
   Resistencia entre drenaje y fuente RDS(on): 2.8 Ohm
   Paquete / Cubierta: TO-251

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LSH80R2K8GT Datasheet (PDF)

 ..1. Size:912K  lonten
lsg80r2k8gt lsh80r2k8gt.pdf

LSH80R2K8GT LSH80R2K8GT

LSG80R2K8GT/ LSH80R2K8GTLonFETLonten N-channel 800V, 2A, 2.8 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 850VDS j,maxadvanced super junction technology. The resulting R 2.8DS(on),maxdevice has extremely low on resistance, making it I 5ADMespecially suitable for applications which require Q 7.7nCg,typsuperior power d

 8.1. Size:1396K  lonten
lsc80r680gt lsd80r680gt lse80r680gt lsf80r680gt lsg80r680gt lsh80r680gt.pdf

LSH80R2K8GT LSH80R2K8GT

LSC80R680GT/LSD80R680GT/LSE80R680GT/LSF80R680GT/LSG80R680GT/LSH80R680GTLonFETLonten N-channel 800V, 8A, 0.68 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 850VDS j,maxadvanced super junction technology. The resulting R 0.68DS(on),maxdevice has extremely low on resistance, making it I 8ADMespecially suitable for applicat

 8.2. Size:1307K  lonten
lsc80r980gt lsd80r980gt lse80r980gt lsf80r980gt lsg80r980gt lsh80r980gt.pdf

LSH80R2K8GT LSH80R2K8GT

LSC80R980GT/LSD80R980GT/LSE80R980GT/LSF80R980GT/LSG80R980GT/LSH80R980GTLonFETLonten N-channel 800V, 5A, 0.98 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 850VDS j,maxadvanced super junction technology. The resulting R 0.98DS(on),maxdevice has extremely low on resistance, making it I 5ADMespecially suitable for applicat

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