MEM2302XG-N Todos los transistores

 ..1. Size:316K  microne
 mem2302xg-n.pdf

MEM2302XG-N N-Channel MOSFET MEM2302XG-N General Description Features MEM2302XG-N Series N-channel enhancement 20V/3A mode field-effect transistor These miniature surface RDS(ON), Vgs@2.5V, Ids@2.8A = 42m mount MOSFETs utilize High Cell Density process. RDS(ON), Vgs@4.5V, Ids@3A =35m Low RDS(ON) assures minimal power loss and High Density Cell Design For Ultra L

 6.1. Size:264K  microne
 mem2302x.pdf

MEM2302 N-Channel MOSFET MEM2302X General Description Features MEM2302XG Series N-channel enhancement mode 20V/3A field-effect transistor ,produced with high cell density RDS(ON) =29m @ VGS=4.5V, ID=3A DMOS trench technology, which is especially used to RDS(ON) =36m @ VGS=2.5V, ID=2A minimize on-state resistance. This device particularly High Density Cell Design For Ultra

 7.1. Size:318K  microne
 mem2302m3.pdf

MEM2302 N-Channel MOSFET MEM2302M3 General Description Features MEM2302M3G Series N-channel enhancement mode 20V/3A field-effect transistor ,produced with high cell density RDS(ON) =29m @ VGS=4.5V, ID=3A DMOS trench technology, which is especially used to RDS(ON) =36m @ VGS=2.5V, ID=2A minimize on-state resistance. This device particularly High Density Cell Design For Ultra Low

 7.2. Size:1764K  cn vbsemi
 mem2302.pdf

MEM2302 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC Conver