MEM2303M3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MEM2303M3
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.4 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 4.2 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1.3 V
Carga de la puerta (Qg): 9.5 nC
Tiempo de subida (tr): 3.5 nS
Conductancia de drenaje-sustrato (Cd): 115 pF
Resistencia entre drenaje y fuente RDS(on): 0.058 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET MEM2303M3
MEM2303M3 Datasheet (PDF)
mem2303m3.pdf
MEM2303 P-Channel MOSFET MEM2303M3 General Description Features MEM2303M3G Series P-channel enhancement mode -30V/-4.2A field-effect transistor ,produced with high cell density RDS(ON) =55m@ VGS=-10V,ID=-4.2A DMOS trench technology, which is especially used to RDS(ON) =62m@ VGS=-4.5V,ID=-4A minimize on-state resistance. This device particularly RDS(ON) =72m@ VGS=-2.5V,ID=-2.5
mem2303xg-n.pdf
MEM2303 P-Channel MOSFET MEM2303XG-N General Description Features MEM2303XG-N Series P-channel enhancement -30V/-2.9A mode field-effect transistor , These miniature surface RDS(ON), Vgs@-10V, Ids@-2.9A = 92m mount MOSFETs utilize High Cell Density process. RDS(ON), Vgs@-4.5V, Ids@-1.9A = 115m Low RDS(ON) assures minimal power loss and High Density Cell Design For Ultra
mem2306s.pdf
MEM2306 N-Channel MOSFET MEM2306 General Description Features MEM2306SG Series Dual N-channel enhancement 20V/5A mode field-effect transistor produced with high cell RDS(ON) =29m@ VGS=3.85V,ID=5A density DMOS trench technology, which is especially High Density Cell Design For Ultra Low On-Resistance used to minimize on-state resistance. This device surface mount pa
mem2307xg.pdf
MEM2307XG P-Channel MOSFET MEM2307XG General Description Features MEM2307XG Series P-channel enhancement -30V/-4.1A mode field-effect transistor ,produced with high cell RDS(ON)88m@ VGS=-10V,ID=-4.1A density DMOS trench technology, which is especially RDS(ON)108m@ VGS=-4.5V,ID=-3A used to minimize on-state resistance. This device High Density Cell Design For Ultra
mem2301xg-n.pdf
MEM2301XG-N P-Channel MOSFET MEM2301XG-N General Description Features MEM2301XG-N Series P-channel enhancement -20V/-2.8A mode field-effect transistor , These miniature surface RDS(ON), Vgs@-1.8V, Ids@-1.1A = 230m mount MOSFETs utilize High Cell Density process. RDS(ON), Vgs@-2.5V, Ids@-2.0A = 140m Low RDS(ON) assures minimal power loss and RDS(ON), Vgs@-4.5V, Ids@-3.1A = 9
mem2302x.pdf
MEM2302 N-Channel MOSFET MEM2302X General Description Features MEM2302XG Series N-channel enhancement mode 20V/3A field-effect transistor ,produced with high cell density RDS(ON) =29m@ VGS=4.5V, ID=3A DMOS trench technology, which is especially used to RDS(ON) =36m@ VGS=2.5V, ID=2A minimize on-state resistance. This device particularly High Density Cell Design For Ultra
mem2307m3g.pdf
MEM2307M3G P-Channel MOSFET MEM2307M3G General Description Features MEM2307M3G Series P-channel enhancement -30V/-4.1A mode field-effect transistor ,produced with high cell RDS(ON)88m@ VGS=-10V,ID=-4.1A density DMOS trench technology, which is especially RDS(ON)108m@ VGS=-4.5V,ID=-3A used to minimize on-state resistance. This device High Density Cell Design For Ultra Low
mem2301x.pdf
MEM2301 P-Channel MOSFET MEM2301X General Description Features MEM2301XG Series P-channel enhancement mode -20V/-2.8A field-effect transistor ,produced with high cell density RDS(ON) =93m@ VGS=-4.5V,ID=-2.8A DMOS trench technology, which is especially used to RDS(ON) =113m@ VGS=-2.5V,ID=-2A minimize on-state resistance. This device particularly High Density Cell Design
mem2302xg-n.pdf
MEM2302XG-N N-Channel MOSFET MEM2302XG-N General Description Features MEM2302XG-N Series N-channel enhancement 20V/3A mode field-effect transistor These miniature surface RDS(ON), Vgs@2.5V, Ids@2.8A = 42m mount MOSFETs utilize High Cell Density process. RDS(ON), Vgs@4.5V, Ids@3A =35m Low RDS(ON) assures minimal power loss and High Density Cell Design For Ultra L
mem2309s.pdf
MEM2309 P-Channel MOSFET MEM2309S Description Feature -30V/-6A MEM2309SG Series P-channel enhancement RDS(ON) =53m@ VGS=-10V,ID=-6A mode field-effect transistor ,produced with high RDS(ON) =68m@ VGS=-4.5V,ID=-4A cell density DMOS trench technology, which is High Density Cell Design For Ultra Low especially used to minimize on-state On-Resistance resist
mem2302m3.pdf
MEM2302N-Channel MOSFET MEM2302M3General Description FeaturesMEM2302M3G Series N-channel enhancement mode 20V/3Afield-effect transistor ,produced with high cell density RDS(ON) =29m@ VGS=4.5V, ID=3ADMOS trench technology, which is especially used to RDS(ON) =36m@ VGS=2.5V, ID=2Aminimize on-state resistance. This device particularly High Density Cell Design For Ultra Low
mem2301.pdf
MEM2301www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS
mem2302.pdf
MEM2302www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Conver
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
