MEM2309S Todos los transistores

 ..1. Size:256K  microne
 mem2309s.pdf

MEM2309 P-Channel MOSFET MEM2309S Description Feature -30V/-6A MEM2309SG Series P-channel enhancement RDS(ON) =53m @ VGS=-10V,ID=-6A mode field-effect transistor ,produced with high RDS(ON) =68m @ VGS=-4.5V,ID=-4A cell density DMOS trench technology, which is High Density Cell Design For Ultra Low especially used to minimize on-state On-Resistance resist

 8.1. Size:207K  microne
 mem2303xg-n.pdf

MEM2303 P-Channel MOSFET MEM2303XG-N General Description Features MEM2303XG-N Series P-channel enhancement -30V/-2.9A mode field-effect transistor , These miniature surface RDS(ON), Vgs@-10V, Ids@-2.9A = 92m mount MOSFETs utilize High Cell Density process. RDS(ON), Vgs@-4.5V, Ids@-1.9A = 115m Low RDS(ON) assures minimal power loss and High Density Cell Design For Ultra

 8.2. Size:243K  microne
 mem2306s.pdf

MEM2306 N-Channel MOSFET MEM2306 General Description Features MEM2306SG Series Dual N-channel enhancement 20V/5A mode field-effect transistor produced with high cell RDS(ON) =29m @ VGS=3.85V,ID=5A density DMOS trench technology, which is especially High Density Cell Design For Ultra Low On-Resistance used to minimize on-state resistance. This device surface mount pa

 8.3. Size:365K  microne
 mem2307xg.pdf

MEM2307XG P-Channel MOSFET MEM2307XG General Description Features MEM2307XG Series P-channel enhancement -30V/-4.1A mode field-effect transistor ,produced with high cell RDS(ON) 88m @ VGS=-10V,ID=-4.1A density DMOS trench technology, which is especially RDS(ON) 108m @ VGS=-4.5V,ID=-3A used to minimize on-state resistance. This device High Density Cell Design For Ultra

 8.4. Size:716K  microne
 mem2303m3.pdf

MEM2303 P-Channel MOSFET MEM2303M3 General Description Features MEM2303M3G Series P-channel enhancement mode -30V/-4.2A field-effect transistor ,produced with high cell density RDS(ON) =55m @ VGS=-10V,ID=-4.2A DMOS trench technology, which is especially used to RDS(ON) =62m @ VGS=-4.5V,ID=-4A minimize on-state resistance. This device particularly RDS(ON) =72m @ VGS=-2.5V,ID=-2.5

 8.5. Size:364K  microne
 mem2301xg-n.pdf

MEM2301XG-N P-Channel MOSFET MEM2301XG-N General Description Features MEM2301XG-N Series P-channel enhancement -20V/-2.8A mode field-effect transistor , These miniature surface RDS(ON), Vgs@-1.8V, Ids@-1.1A = 230m mount MOSFETs utilize High Cell Density process. RDS(ON), Vgs@-2.5V, Ids@-2.0A = 140m Low RDS(ON) assures minimal power loss and RDS(ON), Vgs@-4.5V, Ids@-3.1A = 9

 8.6. Size:264K  microne
 mem2302x.pdf

MEM2302 N-Channel MOSFET MEM2302X General Description Features MEM2302XG Series N-channel enhancement mode 20V/3A field-effect transistor ,produced with high cell density RDS(ON) =29m @ VGS=4.5V, ID=3A DMOS trench technology, which is especially used to RDS(ON) =36m @ VGS=2.5V, ID=2A minimize on-state resistance. This device particularly High Density Cell Design For Ultra

 8.7. Size:754K  microne
 mem2307m3g.pdf

MEM2307M3G P-Channel MOSFET MEM2307M3G General Description Features MEM2307M3G Series P-channel enhancement -30V/-4.1A mode field-effect transistor ,produced with high cell RDS(ON) 88m @ VGS=-10V,ID=-4.1A density DMOS trench technology, which is especially RDS(ON) 108m @ VGS=-4.5V,ID=-3A used to minimize on-state resistance. This device High Density Cell Design For Ultra Low

 8.8. Size:306K  microne
 mem2301x.pdf

MEM2301 P-Channel MOSFET MEM2301X General Description Features MEM2301XG Series P-channel enhancement mode -20V/-2.8A field-effect transistor ,produced with high cell density RDS(ON) =93m @ VGS=-4.5V,ID=-2.8A DMOS trench technology, which is especially used to RDS(ON) =113m @ VGS=-2.5V,ID=-2A minimize on-state resistance. This device particularly High Density Cell Design

 8.9. Size:316K  microne
 mem2302xg-n.pdf

MEM2302XG-N N-Channel MOSFET MEM2302XG-N General Description Features MEM2302XG-N Series N-channel enhancement 20V/3A mode field-effect transistor These miniature surface RDS(ON), Vgs@2.5V, Ids@2.8A = 42m mount MOSFETs utilize High Cell Density process. RDS(ON), Vgs@4.5V, Ids@3A =35m Low RDS(ON) assures minimal power loss and High Density Cell Design For Ultra L

 8.10. Size:318K  microne
 mem2302m3.pdf

MEM2302 N-Channel MOSFET MEM2302M3 General Description Features MEM2302M3G Series N-channel enhancement mode 20V/3A field-effect transistor ,produced with high cell density RDS(ON) =29m @ VGS=4.5V, ID=3A DMOS trench technology, which is especially used to RDS(ON) =36m @ VGS=2.5V, ID=2A minimize on-state resistance. This device particularly High Density Cell Design For Ultra Low

 8.11. Size:871K  cn vbsemi
 mem2301.pdf

 8.12. Size:1764K  cn vbsemi
 mem2302.pdf

MEM2302 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC Conver