MIC94053 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MIC94053
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.27 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 6 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 6 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.084 Ohm
Encapsulados: SC70-6
Búsqueda de reemplazo de MIC94053 MOSFET
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MIC94053 datasheet
mic94052 mic94053.pdf
MIC94052/53 MIC94052/94053 84m P-Channel MOSFET in SC-70-6 General Description Features The MIC94052/94053 are low on-resistance, 84m (max) 1.8V to 5.5V input voltage range P-channel MOSFETs. They are housed in a Teeny SC- Low on-resistance P-channel MOSFET 70-6 package. 70m at VGS = 4.5V (typ) 2A continuous current Designed for high-side switch applications where
mic94052bc6tr mic94052yc6tr mic94053bc6tr mic94053yc6tr.pdf
MIC94052/53 MIC94052/94053 84m P-Channel MOSFET in SC-70-6 General Description Features The MIC94052/94053 are low on-resistance, 84m (max) 1.8V to 5.5V input voltage range P-channel MOSFETs. They are housed in a Teeny SC- Low on-resistance P-channel MOSFET 70-6 package. 70m at VGS = 4.5V (typ) 2A continuous current Designed for high-side switch applications where
mic94050bm4tr mic94050ym4tr mic94051bm4tr mic94051ym4tr.pdf
MIC94050/94051 Micrel MIC94050/94051 4-Terminal SymFET P-Channel MOSFET General Description The MIC94050 and MIC94051 are 4-terminal silicon gate SymFET P-channel MOSFETs that provide low on-resistance in a very small package. Features Designed for high-side switch applications where space is 0.125 typical on-resistance critical, the MIC94050/1 exhibits an on-resistance
mic94030bm4tr mic94030ym4tr mic94031bm4tr mic94031ym4tr.pdf
MIC94030/94031 TinyFET P-Channel MOSFET General Description Features The MIC94030 and MIC94031 are 4-terminal silicon gate 13.5V minimum drain-to-source breakdown P-channel MOSFETs that provide low on-resistance in a 0.75 typical on-resistance very small package. at 4.5V gate-to-source voltage Designed for high-side switch applications where space is 0.4
Otros transistores... MEM2310X , MEM2313 , MEM2402 , MEM4N60THDG , MEM4N60THG , MEM4N60K3G , MEM4N60A3G , MIC94052 , AO3400A , TN0106 , TN0110 , TN0604 , TN0702 , TN2106K1-G , TN2106N3-G , TN2524 , TP2104K1 .
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