2N7002KWA Todos los transistores

 

2N7002KWA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N7002KWA
   Código: 72K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.34 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Cossⓘ - Capacitancia de salida: 30(max) pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
   Paquete / Cubierta: SOT323

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2N7002KWA Datasheet (PDF)

 ..1. Size:854K  mcc
2n7002kwa.pdf

2N7002KWA
2N7002KWA

Features High Density Cell Design for Low RDS(ON) Voltage Controlled Small Signal Switch Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free. Green Device (Note 1) Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)Maximum Ratings Operating Junct

 6.1. Size:286K  fairchild semi
2n7002kw.pdf

2N7002KWA
2N7002KWA

May 20112N7002KWN-Channel Enhancement Mode Field Effect TransistorFeatures Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101DSSOT-323GMarking : 7KWAb

 6.2. Size:120K  onsemi
2n7002kw.pdf

2N7002KWA
2N7002KWA

2N7002KWN-Channel EnhancementMode Field EffectTransistorFeatureswww.onsemi.com Low On-Resistance Low Gate Threshold VoltageD Low Input Capacitance Fast Switching SpeedS Low Input/Output Leakage G Ultra-Small Surface Mount PackageSC-703 LEAD These Devices are Pb-Free and are RoHS CompliantCASE 419AB ESD HBM = 1000 V as per JESD22 A114 a

 6.3. Size:527K  secos
2n7002kw.pdf

2N7002KWA
2N7002KWA

2N7002KW 115mA , 60V, RDS(ON) 4 N-Ch Small Signal MOSFET with ESD Protection Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-323 RDS(ON), VGS@10V, IDS@500mA=3 RDS(ON), VGS@4.5V, IDS@200mA=4 A Advanced Trench Process Technology L High Density Cell Design For Ultra Low On-Resistance

 6.4. Size:536K  secos
s2n7002kw.pdf

2N7002KWA
2N7002KWA

S2N7002KW 115mA, 60V N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free SOT-323FEATURES Low on-resistance Fast switching Speed AL Low-voltage drive 33 Easily designed drive circuits Top View C B11 2 ESD protected:1500V 2K EDH JF GMillimeter MillimeterREF. REF.

 6.5. Size:1922K  jiangsu
2n7002kw.pdf

2N7002KWA
2N7002KWA

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS2N7002KW N-Channel MOSFETID V(BR)DSS RDS(on)MAX SOT-323 2.5 3 1. GATE2. SOURCE123. DRAINFEATURE APPLICATION High density cell design for Low RDS(on) Voltage controlled sm

 6.6. Size:275K  panjit
2n7002kw.pdf

2N7002KWA
2N7002KWA

2N7002KW60V N-Channel Enhancement Mode MOSFET - ESD ProtectedFEATURES RDS(ON), VGS@10V,IDS@500mA=3 RDS(ON), VGS@4.5V,IDS@200mA=4 Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Very Low Leakage Current In Off Condition Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, La

 6.7. Size:1018K  slkor
2n7002kw.pdf

2N7002KWA
2N7002KWA

2N7002KWPlastic-Encapsulate MOSFETSN-Channel MOSFETSOT-323IV(BR)DSS RDS(on)MAX D35K@10V60 V340mA1. GATE5.3K@4.5V2. SOURCE123. DRAINFEATUREAPPLICATION Load Switch for Portable Devicesz Highdensity celldesign for Low RDS(on) DC/DC Converterz Voltagecontrolled smallsignal switchz Rugged andreliablez High saturation current capabilityz ESD pro

 6.8. Size:319K  powersilicon
2n7002kw.pdf

2N7002KWA
2N7002KWA

DATA SHEET 2N7002KW N-CHANNELENHANCEMENT MODE FIELD EFFECT TRANSISTOR VOLTAGE 60 Volts CURRENT 300 mA FEATURES N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR, DESIGNED FOR HIGH SPEED PULSE AMPLIFIER AND DRIVE APPLICATION. ESD MIL-STD883 ,1KV CONTACT DISCHARGE COMPLIANT PROTECTION. LEAD FREE AND HALOGEN-FREE. MECHANICAL DATA HIGDENSITY CELL DESIGN FOR LOW RDS

 6.9. Size:302K  cn yfw
2n7002kw.pdf

2N7002KWA
2N7002KWA

2N7002KW SOT-323 N-Channel Enhancement MOSFET3FeaturesLow On-Resistance: RDS(ON)Low Gate Threshold Voltage21.GateLow Input Capacitance2.SourceFast Switching Speed 3.Drain1Low Input/Output Leakage Simplified outline(SOT-323) ESD Protected 2KV HBMDrainGate GateProtectionSourceDiodeAbsolute Maximum Ratings Ta=25Parameter Symbol Rating UnitDrain

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