2N7002KWA Todos los transistores

 ..1. Size:854K  mcc
 2n7002kwa.pdf

Features High Density Cell Design for Low RDS(ON) Voltage Controlled Small Signal Switch Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free. Green Device (Note 1) Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junct

 6.1. Size:286K  fairchild semi
 2n7002kw.pdf

May 2011 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101 D S SOT-323 G Marking 7KW Ab

 6.2. Size:120K  onsemi
 2n7002kw.pdf

2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features www.onsemi.com Low On-Resistance Low Gate Threshold Voltage D Low Input Capacitance Fast Switching Speed S Low Input/Output Leakage G Ultra-Small Surface Mount Package SC-70 3 LEAD These Devices are Pb-Free and are RoHS Compliant CASE 419AB ESD HBM = 1000 V as per JESD22 A114 a

 6.3. Size:527K  secos
 2n7002kw.pdf

2N7002KW 115mA , 60V, RDS(ON) 4 N-Ch Small Signal MOSFET with ESD Protection Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-323 RDS(ON), VGS@10V, IDS@500mA=3 RDS(ON), VGS@4.5V, IDS@200mA=4 A Advanced Trench Process Technology L High Density Cell Design For Ultra Low On-Resistance

 6.4. Size:536K  secos
 s2n7002kw.pdf

S2N7002KW 115mA, 60V N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free SOT-323 FEATURES Low on-resistance Fast switching Speed A L Low-voltage drive 3 3 Easily designed drive circuits Top View C B 1 1 2 ESD protected 1500V 2 K E D H J F G Millimeter Millimeter REF. REF.

 6.5. Size:1922K  jiangsu
 2n7002kw.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2N7002KW N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-323 2.5 3 1. GATE 2. SOURCE 1 2 3. DRAIN FEATURE APPLICATION High density cell design for Low RDS(on) Voltage controlled sm

 6.6. Size:275K  panjit
 2n7002kw.pdf

2N7002KW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES RDS(ON), VGS@10V,IDS@500mA=3 RDS(ON), VGS@4.5V,IDS@200mA=4 Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Very Low Leakage Current In Off Condition Specially Designed for Battery Operated Systems, Solid-State Relays Drivers Relays, Displays, La

 6.7. Size:1018K  slkor
 2n7002kw.pdf

2N7002KW Plastic-Encapsulate MOSFETS N-Channel MOSFET SOT-323 I V(BR)DSS RDS(on)MAX D 3 5K@10V 60 V 340mA 1. GATE 5.3K@4.5V 2. SOURCE 1 2 3. DRAIN FEATURE APPLICATION Load Switch for Portable Devices z Highdensity celldesign for Low R DS(on) DC/DC Converter z Voltagecontrolled smallsignal switch z Rugged andreliable z High saturation current capability z ESD pro

 6.8. Size:319K  powersilicon
 2n7002kw.pdf

DATA SHEET 2N7002KW N-CHANNELENHANCEMENT MODE FIELD EFFECT TRANSISTOR VOLTAGE 60 Volts CURRENT 300 mA FEATURES N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR, DESIGNED FOR HIGH SPEED PULSE AMPLIFIER AND DRIVE APPLICATION. ESD MIL-STD883 , 1KV CONTACT DISCHARGE COMPLIANT PROTECTION. LEAD FREE AND HALOGEN-FREE. MECHANICAL DATA HIGDENSITY CELL DESIGN FOR LOW RDS

 6.9. Size:302K  cn yfw
 2n7002kw.pdf

2N7002KW SOT-323 N-Channel Enhancement MOSFET 3 Features Low On-Resistance RDS(ON) Low Gate Threshold Voltage 2 1.Gate Low Input Capacitance 2.Source Fast Switching Speed 3.Drain 1 Low Input/Output Leakage Simplified outline(SOT-323) ESD Protected 2KV HBM Drai n Gate Gate Protection Source Diode Absolute Maximum Ratings Ta=25 Parameter Symbol Rating Unit Drain