MCU20P10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MCU20P10
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 70 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 61 nC
   trⓘ - Tiempo de subida: 73 nS
   Cossⓘ - Capacitancia de salida: 590 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.116 Ohm
   Paquete / Cubierta: TO252

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MCU20P10 Datasheet (PDF)

..1. Size:1151K mcc
mcu20p10.pdf

MCU20P10Features Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Reliable and Rugged Epoxy Meets UL 94 V-0 Flammability Rating P-CHANNEL Moisture Sensitivity Level 1MOSFET Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering In

9.1. Size:875K mcc
mcu20n06.pdf

MCU20N06Features High Density Cell Design for Ultra Low RDS(on) Fully Characterized Avalanche Voltage and Current Excellent Package for Good Heat Dissipation Special Process Technology for High ESD CapabilityN-CHANNEL Epoxy Meets UL 94 V-0 Flammability RatingMOSFET Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"

9.2. Size:799K mcc
mcu20n15.pdf

MCU20N15Features Excellent Gate Charge x RDS(on) Product(FOM) Very Low On-Resistance RDS(on) Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-CHANNEL Halogen Free Available Upon Request By Adding Suffix "-HF"MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Maximum RatingsOpe

9.3. Size:881K mcc
mcu20n06b.pdf

MCU20N06BFeatures High Density Cell Design for Ultra Low RDS(on) Fully Characterized Avalanche Voltage and Current Excellent Package for Good Heat Dissipation Special Process Technology for High ESD CapabilityN-CHANNEL Epoxy Meets UL 94 V-0 Flammability RatingMOSFET Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"

9.4. Size:877K mcc
mcu20n06a.pdf

MCU20N06AFeatures High Density Cell Design for Ultra Low RDS(on) Fully Characterized Avalanche Voltage and Current Excellent Package for Good Heat Dissipation Special Process Technology for High ESD CapabilityN-CHANNEL Epoxy Meets UL 94 V-0 Flammability RatingMOSFET Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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