SI3400A Todos los transistores

 

SI3400A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SI3400A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 5.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 max nS

Cossⓘ - Capacitancia de salida: 108 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm

Encapsulados: SOT23

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SI3400A datasheet

 ..1. Size:497K  mcc
si3400a.pdf pdf_icon

SI3400A

M C C R Micro Commercial Components Micro Commercial Components 20736 Marilla Street Chatsworth CA 91311 SI3400A Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" N-Channel Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 Enhancement Mode High dense cell design for extremely low

 8.1. Size:3660K  cn szxunrui
si3400.pdf pdf_icon

SI3400A

SOT-23 Plastic-Encapsulate MOSFETS SI3400 N-Channel 30-V(D-S) MOSFET SI3400 V(BR)DSS RDS(on)MAX ID SOT-23 SOT-23-3L / 0.028 @ 10V 3 1.GATE 30V 5.8A 0.033 @ 4.5V 2.SOURCE 3.DRAIN 1 0.052 @ 2.5V 2 General FEATURE Equivalent Circuit MARKING TrenchFET Power MOSFET Lead free product is acquired Surface mount package A01TF w APPLICATION *w week code Load Sw

 9.1. Size:192K  vishay
si3407dv.pdf pdf_icon

SI3400A

Si3407DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.0240 at VGS = - 4.5 V - 8.0a TrenchFET Power MOSFET - 20 21 nC PWM Optimized 0.0372 at VGS = - 2.5 V - 8.0a 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/9

 9.2. Size:98K  vishay
si3403dv.pdf pdf_icon

SI3400A

Si3403DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.07 at VGS = - 4.5 V - 5 - 20 4.5 nC PWM Optimized, Low Qgd/Qgs Ratio 0.105 at VGS = - 2.5 V - 4.1 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switc

Otros transistores... SI2310A , SI2310B , SI2312B , SI2324A , SI3134KDW , SI3134KL3 , SI3139KE , SI3139KL3 , AO4407 , SI3401A , SI3402 , SI3407 , SI3415A , SI3415B , SI3420A , SIL03N10 , SIL05N06 .

History: SI3134KDW | SSH8N80A | SI1900DL | WSF40N10A

 

 

 

 

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