SI3420A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SI3420A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.25 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 10 V
Corriente continua de drenaje |Id|: 6 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
Carga de la puerta (Qg): 12 nC
Tiempo de subida (tr): 7.5 nS
Conductancia de drenaje-sustrato (Cd): 90 pF
Resistencia entre drenaje y fuente RDS(on): 0.028 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET SI3420A
SI3420A Datasheet (PDF)
si3420a.pdf
SI3420AFeatures High Power and Current Handing Capability Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1N-CHANNEL Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS MOSFETCompliant. See Ordering Information)Maximum Ratings Operating Junction Temperature Range : -55
si3420dv.pdf
Si3420DVVishay SiliconixN-Channel 200-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD 100% Rg TestedVDS (V) rDS(on) (W) ID (A)200 3.7 @ VGS = 10 V 0.5TSOP-6(1, 2, 5, 6) DTop View1 63 mm52(3) G3 42.85 mm(4) SOrdering Information: Si3420DV-T1N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol 5 secs Steady State UnitDrai
si3420.pdf
MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components CA 91311SI3420Phone: (818) 701-4933Fax: (818) 701-4939FeaturesN-Channel High dense cell design for extremely low RDS(ON) Rugged and reliableEnhancement Mode Lead free product is acquired SOT-23 PackageField Effect Transistor Marking Code: R20 Epoxy me
si3429edv.pdf
Si3429EDVwww.vishay.comVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) a, e Qg (TYP.) 100 % Rg tested0.0210 at VGS = -4.5 V -8 Built-in ESD protection -20 0.0240 at VGS = -2.5 V -8 43.2 nC- Typical ESD performance 3000 V0.0380 at VGS = -1.8 V -8 Material categorization: For defini
si3421dv.pdf
Si3421DVVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)d,e Qg (Typ.) 100 % Rg and UIS Tested Material categorization:0.0192 at VGS = -10 V -8For definitions of compliance please see -30 0.0232 at VGS = -6 V -8 21 nCwww.vishay.com/doc?999120.0270 at VGS = -4.5 V -8AvailableTSO
si3424bdv.pdf
Si3424BDVVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.028 at VGS = 10 V 8a TrenchFET Power MOSFET30 6.2 100 % Rg Tested0.038 at VGS = 4.5 V 7 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable DevicesTSOP
si3424dv.pdf
Si3424DVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.028 at VGS = 10 V 6.7 TrenchFET Power MOSFETs300.038 at VGS = 4.5 V 5.7 Compliant to RoHS Directive 2002/95/ECTSOP-6Top View(1, 2, 5, 6) D1 63 mm52(3) G3 42.85 mm(4) SOrdering I
si3424cdv.pdf
Si3424CDVVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)a, b Qg (Typ.)Definition0.026 at VGS = 10 V TrenchFET Power MOSFET830 4.2 100 % Rg Tested0.032 at VGS = 4.5 V 8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable Devices
si3422dv.pdf
Si3422DVNew ProductVishay SiliconixN-Channel 200-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)200 5 @ VGS = 10 V "0.42(1, 2, 5, 6) DTSOP-6Top View1 6(3) G3 mm523 4(4) S2.85 mmN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol 5 secs Steady State UnitDrain-Source Voltage VDS 200VVGate-Source Voltag
si3424bd.pdf
Si3424BDVVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.028 at VGS = 10 V 8a TrenchFET Power MOSFET30 6.2 100 % Rg Tested0.038 at VGS = 4.5 V 7 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable DevicesTSOP
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