EFC2K101NUZ Todos los transistores

 

EFC2K101NUZ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: EFC2K101NUZ

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 12 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 15 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 19000 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0062 Ohm

Encapsulados: WLCSP6

 Búsqueda de reemplazo de EFC2K101NUZ MOSFET

- Selecciónⓘ de transistores por parámetros

 

EFC2K101NUZ datasheet

 ..1. Size:188K  onsemi
efc2k101nuz.pdf pdf_icon

EFC2K101NUZ

EFC2K101NUZ Power MOSFET for 1 Cell Lithium ion Battery Protection 12 V, 6.2 mW, 15 A, Dual N-Channel www.onsemi.com This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable VSSS RSS(ON) MAX IS MAX machines. Best suited for 1-cell lithium-ion battery applications. 12 V 6.2 mW @ 4.5 V 15 A Features 6.6 mW @

 7.1. Size:610K  onsemi
efc2k103nuz.pdf pdf_icon

EFC2K101NUZ

MOSFET - Power for 1-Cell Lithium-ion Battery Protection EFC2K103NUZ 12 V, 1.8 mW, 40 A, Dual N-Channel www.onsemi.com This power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable VSSS RSS(ON) MAX IS MAX machines. Best suited for 1-cell lithium-ion battery applications. 12 V 1.8 mW @ 4.5 V 40 A Features 1.9 mW @ 3.

 7.2. Size:176K  onsemi
efc2k107nuz.pdf pdf_icon

EFC2K101NUZ

EFC2K107NUZ MOSFET Power, Dual, N-Channel, for 1-Cell Lithium-ion Battery Protection www.onsemi.com 12 V, 2.85 mW, 20 A This Power MOSFET features a low on-state resistance. This device VSSS RSS(ON) MAX IS MAX is suitable for applications such as power switches of portable 12 V 2.85 mW @ 4.5 V 20 A machines. Best suited for 1-cell lithium-ion battery applications. 3.1 mW @ 3.8 V

Otros transistores... PK501BA , PK537BA , PK650DY , PKCH2BB , BSS123LT1G , BVSS123LT1G , EFC2J004NUZ , EFC2J013NUZ , IRLB3034 , EFC2K103NUZ , EFC2K107NUZ , EFC3C001NUZ , EFC4C002NL , EFC4K105NUZ , EFC4K110NUZ , EFC8811R , FCB070N65S3 .

 

 

 


🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10 | ASW80R290E | ASW65R120EFD | ASW65R110E | ASW65R095EFD | ASW65R046EFD | ASW65R041EFDA | ASW65R041E | ASW60R150E | ASW60R090EFDA

 

 

 

Popular searches

irfz44 | 2n5551 | irf540n | irf3205 mosfet | 2n3055 | irfp260n | 2n2222 datasheet | irf9540

 

 

↑ Back to Top
.