FCPF190N60-F152 Todos los transistores

 

FCPF190N60-F152 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FCPF190N60-F152

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 39 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 1630 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.199 Ohm

Encapsulados: TO220F

 Búsqueda de reemplazo de FCPF190N60-F152 MOSFET

- Selecciónⓘ de transistores por parámetros

 

FCPF190N60-F152 datasheet

 0.1. Size:1195K  onsemi
fcpf190n60-f152.pdf pdf_icon

FCPF190N60-F152

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 4.1. Size:641K  fairchild semi
fcp190n60e fcpf190n60e.pdf pdf_icon

FCPF190N60-F152

December 2013 FCP190N60E / FCPF190N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 20.6 A, 190 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 160 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charg

 4.2. Size:650K  fairchild semi
fcp190n60 fcpf190n60.pdf pdf_icon

FCPF190N60-F152

December 2013 FCP190N60 / FCPF190N60 N-Channel SuperFET II MOSFET 600 V, 20.2 A, 199 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 170 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 5

 4.3. Size:803K  onsemi
fcp190n60e fcpf190n60e.pdf pdf_icon

FCPF190N60-F152

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... FCP165N65S3R0 , FCP190N60_GF102 , FCP190N65S3R0 , FCP220N80 , FCP360N65S3R0 , FCP400N80Z , FCP600N65S3R0 , FCPF165N65S3R0L , P55NF06 , FCPF190N65S3L1 , FCPF190N65S3R0L , FCPF250N65S3R0L , FCPF360N65S3R0L , FCPF36N60NT , FCPF380N60_F152 , FCPF600N60ZL1 , FCPF600N65S3R0L .

 

 

 


🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10

 

 

 

Popular searches

mje15032g | irf1404 | bc550 | irf9530 | 2n2222a transistor | irfp250 | irf640n datasheet | irf540 datasheet

 

 

↑ Back to Top
.