FCPF190N60-F152 Todos los transistores

 

FCPF190N60-F152 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FCPF190N60-F152
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 39 W
   Voltaje máximo drenador - fuente |Vds|: 600 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 20.2 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 3.5 V
   Carga de la puerta (Qg): 57 nC
   Tiempo de subida (tr): 10 nS
   Conductancia de drenaje-sustrato (Cd): 1630 pF
   Resistencia entre drenaje y fuente RDS(on): 0.199 Ohm
   Paquete / Cubierta: TO220F

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FCPF190N60-F152 Datasheet (PDF)

 0.1. Size:1195K  onsemi
fcpf190n60-f152.pdf

FCPF190N60-F152
FCPF190N60-F152

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 4.1. Size:641K  fairchild semi
fcp190n60e fcpf190n60e.pdf

FCPF190N60-F152
FCPF190N60-F152

December 2013FCP190N60E / FCPF190N60E N-Channel SuperFET II Easy-Drive MOSFET600 V, 20.6 A, 190 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 160 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charg

 4.2. Size:650K  fairchild semi
fcp190n60 fcpf190n60.pdf

FCPF190N60-F152
FCPF190N60-F152

December 2013FCP190N60 / FCPF190N60N-Channel SuperFET II MOSFET600 V, 20.2 A, 199 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 170 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 5

 4.3. Size:803K  onsemi
fcp190n60e fcpf190n60e.pdf

FCPF190N60-F152
FCPF190N60-F152

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 4.4. Size:888K  onsemi
fcp190n60 fcpf190n60.pdf

FCPF190N60-F152
FCPF190N60-F152

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 4.5. Size:248K  inchange semiconductor
fcpf190n60.pdf

FCPF190N60-F152
FCPF190N60-F152

isc N-Channel MOSFET Transistor FCPF190N60FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

 4.6. Size:201K  inchange semiconductor
fcpf190n60e.pdf

FCPF190N60-F152
FCPF190N60-F152

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FCPF190N60EFEATURESWith TO-220F packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM

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