FCPF190N65S3L1 Todos los transistores

 

FCPF190N65S3L1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FCPF190N65S3L1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 33 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 14 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 30 nC
   trⓘ - Tiempo de subida: 23 nS
   Cossⓘ - Capacitancia de salida: 30 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
   Paquete / Cubierta: TO220F

 Búsqueda de reemplazo de MOSFET FCPF190N65S3L1

 

FCPF190N65S3L1 Datasheet (PDF)

 ..1. Size:283K  onsemi
fcpf190n65s3l1.pdf

FCPF190N65S3L1
FCPF190N65S3L1

FCPF190N65S3L1Power MOSFET, N-Channel,SUPERFET) III, Easy Drive,650 V, 14 A, 190 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailore

 2.1. Size:271K  onsemi
fcpf190n65s3r0l.pdf

FCPF190N65S3L1
FCPF190N65S3L1

FCPF190N65S3R0LPower MOSFET, N-Channel,SUPERFET) III, Easy Drive,650 V, 17 A, 190 mWDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(on) MAX ID MAXcharge performance. This advanced technology is tailor

 4.1. Size:752K  fairchild semi
fcpf190n65fl1.pdf

FCPF190N65S3L1
FCPF190N65S3L1

September 2014FCPF190N65FL1N-Channel SuperFET II FRFET MOSFET650 V, 20.6 A, 190 mFeatures Description 700 V @TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing RDS(on) = 168 m (Typ.)charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg =

 4.2. Size:977K  onsemi
fcpf190n65fl1.pdf

FCPF190N65S3L1
FCPF190N65S3L1

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 4.3. Size:247K  inchange semiconductor
fcpf190n65fl1.pdf

FCPF190N65S3L1
FCPF190N65S3L1

isc N-Channel MOSFET Transistor FCPF190N65FL1FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top

 


FCPF190N65S3L1
  FCPF190N65S3L1
  FCPF190N65S3L1
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: QM1830M3 | SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD

 

 

 
Back to Top