FDB86569-F085 Todos los transistores

 

FDB86569-F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDB86569-F085
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 94 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 690 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0056 Ohm
   Paquete / Cubierta: TO263
 

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FDB86569-F085 Datasheet (PDF)

 ..1. Size:4057K  onsemi
 fdb86569-f085.pdf pdf_icon

FDB86569-F085

MOSFET N-Channel,POWERTRENCH)60 V, 80 A, 5.6 mWFDB86569-F085Featureswww.onsemi.com Typical RDS(on) = 4.4 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 35 nC at VGS = 10 V, ID = 80 AD UIS Capability These Device is Pb-Free and is RoHS Compliant Qualified to AEC-Q101GApplications Automotive Engine ControlS PowerTrain ManagementD2PAK-3

 7.1. Size:468K  fairchild semi
 fdb86563 f085.pdf pdf_icon

FDB86569-F085

December 2014FDB86563_F085N-Channel PowerTrench MOSFET60 V, 110 A, 1.8 m Features Typical RDS(on) = 1.6 m at VGS = 10V, ID = 80 A DD Typical Qg(tot) = 126 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101GApplications GS Automotive Engine ControlTO-263S PowerTrain ManagementFDB SERIES Solenoid and Motor Drivers

 7.2. Size:440K  onsemi
 fdb86566-f085.pdf pdf_icon

FDB86569-F085

FDB86566-F085DDN-Channel PowerTrench MOSFET 60 V, 110 A, 2.7 mGFeaturesGS Typical RDS(on) = 2.2 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 80 nC at VGS = 10V, ID = 80 ATO-263S UIS CapabilityFDB SERIES RoHS Compliant Qualified to AEC Q101Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/

 7.3. Size:451K  onsemi
 fdb86563-f085.pdf pdf_icon

FDB86569-F085

FDB86563-F085N-Channel PowerTrench MOSFET 60 V, 110 A, 1.8 mDDFeatures Typical RDS(on) = 1.6 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 126 nC at VGS = 10V, ID = 80 A UIS CapabilityG RoHS CompliantGS Qualified to AEC Q101TO-263SApplicationsFDB SERIES Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter

MOSTRAR MÁS

Otros transistores... FDB3632-F085 , FDB3652-F085 , FDB3672-F085 , FDB86360-F085 , FDB86363-F085 , FDB86366-F085 , FDB86563-F085 , FDB86566-F085 , 18N50 , FDB9403-F085 , FDB9403L-F085 , FDB9406-F085 , FDB9406L-F085 , FDB9409-F085 , FDB9409L-F085 , FDB9503L-F085 , FDB9506L-F085 .

History: JSM3420S | NCE40H12A

 

 
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