FDB9409-F085 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDB9409-F085

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 94 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 90 nS

Cossⓘ - Capacitancia de salida: 788 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm

Encapsulados: TO263

 Búsqueda de reemplazo de FDB9409-F085 MOSFET

- Selecciónⓘ de transistores por parámetros

 

FDB9409-F085 datasheet

 ..1. Size:528K  onsemi
fdb9409-f085.pdf pdf_icon

FDB9409-F085

FDB9409-F085 N-Channel PowerTrench MOSFET 40 V, 80 A, 3.5 m D D Features Typical RDS(on) = 2.5 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 43 nC at VGS = 10V, ID = 80 A G UIS Capability RoHS Compliant G S Qualified to AEC Q101 TO-263 S Applications FDB SERIES Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alt

 7.1. Size:444K  onsemi
fdb9409l-f085.pdf pdf_icon

FDB9409-F085

FDB9409L-F085 N-Channel Logic Level PowerTrench MOSFET 40 V, 90 A, 2.9 m Features Typical RDS(on) = 2.3 m at VGS = 10V, ID = 80 A D D Typical Qg(tot) = 52 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 G Applications G S Automotive Engine Control TO-263AB S PowerTrain Management FDB SERIES Solenoid and Motor Drivers Electro

 7.2. Size:288K  inchange semiconductor
fdb9409l.pdf pdf_icon

FDB9409-F085

isc N-Channel MOSFET Transistor FDB9409L FEATURES Drain Current I =90A@ T =25 D C Drain Source Voltage V =40V(Min) DSS Static Drain-Source On-Resistance R =2.9m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 7.3. Size:288K  inchange semiconductor
fdb9409.pdf pdf_icon

FDB9409-F085

isc N-Channel MOSFET Transistor FDB9409 FEATURES Drain Current I =110A@ T =25 D C Drain Source Voltage V =40V(Min) DSS Static Drain-Source On-Resistance R =1.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

Otros transistores... FDB86366-F085, FDB86563-F085, FDB86566-F085, FDB86569-F085, FDB9403-F085, FDB9403L-F085, FDB9406-F085, FDB9406L-F085, 10N65, FDB9409L-F085, FDB9503L-F085, FDB9506L-F085, FDB9509L-F085, FDBL0200N100, FDBL0240N100, FDBL0260N100, FDBL86062-F085