FDBL86062-F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDBL86062-F085
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 429 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 300 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 95 nC
   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 3950 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm
   Paquete / Cubierta: H-PSOF8L

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FDBL86062-F085 Datasheet (PDF)

..1. Size:501K onsemi
fdbl86062-f085.pdf

FDBL86062-F085N-ChannelPOWERTRENCH) MOSFET100 V, 300 A, 2.0 mWwww.onsemi.comFeatures Typical RDS(on) = 1.5 mW at VGS = 10 V, ID = 80 AD Typical Qg(tot) = 95 nC at VGS = 10 V, ID = 80 A UIS Capability Qualified to AEC Q101G This Device is Pb-Free and is RoHS CompliantApplicationsS Automotive Engine Control PowerTrain Management Solenoid a

6.1. Size:462K onsemi
fdbl86063.pdf

MOSFET - POWERTRENCH),N-Channel100 V, 240 A, 2.6 mWFDBL86063Features Typical RDS(on) = 2 mW at VGS = 10 V, ID = 80 Awww.onsemi.com Typical Qg(tot) = 73 nC at VGS = 10 V, ID = 80 A UIS Capability This Device is Pb-Free and is RoHS CompliantTypical Applications Industrial Battery Switch Primary Switch for 12 V SystemsH-PSOF8L 11.68x9.80CASE 100CUMAR

6.2. Size:280K onsemi
fdbl86066-f085.pdf

FDBL86066-F085NChannel POWERTRENCH)MOSFET100 V, 240 A, 4.1 mWFeatureswww.onsemi.com Typical RDS(on) = 3.3 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 47 nC at VGS = 10 V, ID = 80 A UIS Capability VDSS RDS(ON) MAX ID MAX Qualified to AEC Q101100 V 4.1 mW @ 10 V 240 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantDApplication

6.3. Size:684K onsemi
fdbl86063-f085.pdf

FDBL86063-F085N-Channel Power Trench MOSFET100 V, 240 A, 2.6 mFeatures Typical RDS(on) = 2 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 73 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Steering Integr

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

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