FDBL86066-F085 Todos los transistores

 

FDBL86066-F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDBL86066-F085
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 185 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 1950 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0041 Ohm
   Paquete / Cubierta: H-PSOF8L
     - Selección de transistores por parámetros

 

FDBL86066-F085 Datasheet (PDF)

 ..1. Size:280K  onsemi
fdbl86066-f085.pdf pdf_icon

FDBL86066-F085

FDBL86066-F085NChannel POWERTRENCH)MOSFET100 V, 240 A, 4.1 mWFeatureswww.onsemi.com Typical RDS(on) = 3.3 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 47 nC at VGS = 10 V, ID = 80 A UIS Capability VDSS RDS(ON) MAX ID MAX Qualified to AEC Q101100 V 4.1 mW @ 10 V 240 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantDApplication

 6.1. Size:462K  onsemi
fdbl86063.pdf pdf_icon

FDBL86066-F085

MOSFET - POWERTRENCH),N-Channel100 V, 240 A, 2.6 mWFDBL86063Features Typical RDS(on) = 2 mW at VGS = 10 V, ID = 80 Awww.onsemi.com Typical Qg(tot) = 73 nC at VGS = 10 V, ID = 80 A UIS Capability This Device is Pb-Free and is RoHS CompliantTypical Applications Industrial Battery Switch Primary Switch for 12 V SystemsH-PSOF8L 11.68x9.80CASE 100CUMAR

 6.2. Size:501K  onsemi
fdbl86062-f085.pdf pdf_icon

FDBL86066-F085

FDBL86062-F085N-ChannelPOWERTRENCH) MOSFET100 V, 300 A, 2.0 mWwww.onsemi.comFeatures Typical RDS(on) = 1.5 mW at VGS = 10 V, ID = 80 AD Typical Qg(tot) = 95 nC at VGS = 10 V, ID = 80 A UIS Capability Qualified to AEC Q101G This Device is Pb-Free and is RoHS CompliantApplicationsS Automotive Engine Control PowerTrain Management Solenoid a

 6.3. Size:684K  onsemi
fdbl86063-f085.pdf pdf_icon

FDBL86066-F085

FDBL86063-F085N-Channel Power Trench MOSFET100 V, 240 A, 2.6 mFeatures Typical RDS(on) = 2 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 73 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Steering Integr

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: CS15N70F | IRFZ24L | NTD3055-094-1G | 2SK1601

 

 
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