FDBL9401-F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDBL9401-F085
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 429 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 300 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 220 nC
   trⓘ - Tiempo de subida: 82 nS
   Cossⓘ - Capacitancia de salida: 4025 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00065 Ohm
   Paquete / Cubierta: MO-299A

Búsqueda de reemplazo de MOSFET FDBL9401-F085

FDBL9401-F085 Datasheet (PDF)

..1. Size:389K onsemi
fdbl9401-f085.pdf

FDBL9401-F085N-Channel PowerTrench MOSFET 40 V, 300 A, 0.65 mFeatures Typical RDS(on) = 0.5 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 220 nC at VGS = 10V, ID = 80 A UIS Capability D RoHS Compliant Qualified to AEC Q101ApplicationsG Automotive Engine Control PowerTrain Management Solenoid and Motor DriversS Integrated Starter/Alternator Primary Switch

6.1. Size:472K fairchild semi
fdbl9401 f085.pdf

May 2014FDBL9401_F085N-Channel PowerTrench MOSFET40 V, 300 A, 0.65 m Features Typical RDS(on) = 0.5 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 220 nC at VGS = 10V, ID = 80 A UIS Capability D RoHS Compliant Qualified to AEC Q101Applications G Automotive Engine Control PowerTrain Management Solenoid and Motor DriversS Integrated Starter/AlternatorFor

6.2. Size:374K onsemi
fdbl9401l-f085.pdf

FDBL9401L-F085NChannel Logic LevelPowerTrench) MOSFET40 V, 300 A, 0.55 mWFeatureswww.onsemi.com Typical RDS(on) = 0.47 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 269 nC at VGS = 10 V, ID = 80 A UIS CapabilityVDSS RDS(ON) MAX ID MAX Qualified to AEC Q10140 V 0.55 mW @ 10 V 300 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant

7.1. Size:474K fairchild semi
fdbl9406 f085.pdf

May 2014FDBL9406_F085N-Channel PowerTrench MOSFET40 V, 240 A, 1.2 m Features Typical RDS(on) = 0.9 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 90 nC at VGS = 10V, ID = 80 A UIS Capability D RoHS Compliant Qualified to AEC Q101Applications G Automotive Engine Control PowerTrain Management Solenoid and Motor DriversS Integrated Starter/AlternatorForc

7.2. Size:476K fairchild semi
fdbl9403 f085.pdf

May 2014FDBL9403_F085N-Channel PowerTrench MOSFET40 V, 240 A, 0.9 m Features Typical RDS(on) = 0.65 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 144 nC at VGS = 10V, ID = 80 A UIS Capability D RoHS Compliant Qualified to AEC Q101Applications G Automotive Engine Control PowerTrain Management Solenoid and Motor DriversS Integrated Starter/AlternatorFor

7.3. Size:1096K onsemi
fdbl9406-f085.pdf

FDBL9406-F085N-Channel PowerTrench MOSFET 40 V, 240 A, 1.2 mFeaturesD Typical RDS(on) = 0.9 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 90 nC at VGS = 10V, ID = 80 A UIS Capability RoHS CompliantG Qualified to AEC Q101ApplicationsS Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator Primary Switch

7.4. Size:426K onsemi
fdbl9403-f085.pdf

FDBL9403-F085N-Channel PowerTrench MOSFET 40 V, 240 A, 0.9 mFeatures Typical RDS(on) = 0.65 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 144 nC at VGS = 10V, ID = 80 A UIS Capability D RoHS Compliant Qualified to AEC Q101ApplicationsG Automotive Engine Control PowerTrain Management Solenoid and Motor DriversS Integrated Starter/Alternator Primary Switc

7.5. Size:422K onsemi
fdbl9406l-f085.pdf

MOSFET - Power, SingleN-Channel40 V, 1.1 mW, 240 AFDBL9406L-F085Features Small Footprint (TOLL) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1.1 mW @ 10 V

7.6. Size:420K onsemi
fdbl9403l-f085.pdf

FDBL9403L-F085Single NChannel PowerMOSFET40 V, 240 A, 0.72 mWFeatureswww.onsemi.com Small Footprint (TOLL) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable0.72 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

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