FDD5N50FTM-WS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

..1. Size:765K onsemi
fdd5n50ftm-ws.pdf pdf_icon

FDD5N50FTM-WSN-Channel UniFETTM FRFET MOSFET 500 V, 3.5 A, 1.55 DescriptionFeaturesUniFETTM MOSFET is ON Semiconductors high voltage RDS(on) = 1.25 (Typ.) @ VGS = 10 V, ID = 1.75 A MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to Low Gate Charge (Typ. 11 nC)provide better switching performa

6.1. Size:752K fairchild semi
fdd5n50f.pdf pdf_icon

December 2007UniFETTMFDD5N50FtmN-Channel MOSFET, FRFET 500V, 3.5A, 1.55Features Description RDS(on) = 1.25 ( Typ.)@ VGS = 10V, ID = 1.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC)stripe, DMOS technology. Low Crss ( Typ. 5pF)This advanced technology has

7.1. Size:645K fairchild semi
fdd5n50u.pdf pdf_icon

December 2007TMUltra FRFETFDD5N50UtmN-Channel MOSFET, FRFET 500V, 3A, 2.0Features Description RDS(on) = 1.65 ( Typ.)@ VGS = 10V, ID = 1.5A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 11nC)DOMS technology. Low Crss ( Typ. 5pF)This advance technology h

7.2. Size:503K fairchild semi
fdd5n50.pdf pdf_icon

December 2007UniFETTMFDD5N50tmN-Channel MOSFET 500V, 4A, 1.4Features Description RDS(on) = 1.15 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC)stripe, DMOS technology. Low Crss ( Typ. 5pF)This advanced technology has been especiall

7.3. Size:548K fairchild semi
fdd5n50nz.pdf pdf_icon

November 2009UniFET-IITMFDD5N50NZN-Channel MOSFET 500V, 4A, 1.5Features Description RDS(on) = 1.38 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 9nC)stripe, DMOS technology. Low Crss ( Typ. 4pF)This advance technology has been especially

7.4. Size:564K fairchild semi
fdd5n50nzf.pdf pdf_icon

November 2009UniFET-IITMFDD5N50NZFN-Channel MOSFET 500V, 3.7A, 1.75Features Description RDS(on) = 1.47 ( Typ.)@ VGS = 10V, ID = 1.85A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 9nC)stripe, DMOS technology. Low Crss ( Typ. 4pF)This advance technology has been esp

7.5. Size:833K onsemi
fdd5n50u.pdf pdf_icon

FDD5N50UN-Channel UniFETTM Ultra FRFETTM MOSFET500 V, 3 A, 2.0 DescriptionFeaturesUniFETTM MOSFET is ON Semiconductors high voltage MOSFET family based on planar stripe and DMOS technology. RDS(on) = 1.65 (Typ.) @ VGS = 10 V, ID = 1.5 AThis MOSFET is tailored to reduce on-state resistance, and to Low Gate Charge (Typ. 11 nC) provide better switching performance

7.6. Size:841K onsemi
fdd5n50.pdf pdf_icon

FDD5N50N-Channel UniFETTM MOSFETDescription500 V, 4 A, 1.4 UniFETTM MOSFET is ON Semiconductors high voltage FeaturesMOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to RDS(on) = 1.15 (Typ.) @ VGS = 10 V, ID = 2 Aprovide better switching performance and higher avalanche Low Gate Charge (Typ.

7.7. Size:713K onsemi
fdd5n50nz.pdf pdf_icon

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

7.8. Size:1732K onsemi
fdd5n50nzf.pdf pdf_icon