FDD9410L-F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDD9410L-F085
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 75 W
   Voltaje máximo drenador - fuente |Vds|: 40 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 50 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
   Carga de la puerta (Qg): 29 nC
   Tiempo de subida (tr): 7 nS
   Conductancia de drenaje-sustrato (Cd): 615 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0042 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET FDD9410L-F085

FDD9410L-F085 Datasheet (PDF)

..1. Size:449K onsemi
fdd9410l-f085.pdf

FDD9410L-F085N-Channel Logic Level PowerTrench MOSFET40 V, 50 A, 4.2 mFeaturesD Typical RDS(on) = 3.3 m at VGS = 10V, ID = 50 A Typical Qg(tot) = 29 nC at VGS = 10V, ID = 50 A UIS CapabilityD RoHS CompliantG Qualified to AEC Q101GSApplicationsD-PAKTO-252 Automotive Engine ControlS(TO-252) PowerTrain Management Solenoid and Motor Drivers Elec

7.1. Size:573K fairchild semi
fdd9410 f085.pdf

October 2014FDD9410_F085N-Channel Power Trench MOSFET40 V, 50 A, 4.1 m DFeatures Typ rDS(on) = 3.5 m at VGS = 10V, ID = 50 A D Typ Qg(tot) = 23.5 nC at VGS = 10V, ID = 50 AGG UIS CapabilityS RoHS CompliantD-PAKTO-252 Qualified to AEC Q101S(TO-252)Applications Automotive Engine Control Powertrain ManagementForcurrentpackagedrawing,plea

7.2. Size:727K onsemi
fdd9410-f085.pdf

FDD9410-F085N-Channel Power Trench MOSFET40 V, 50 A, 4.1 mFeaturesD Typ rDS(on) = 3.5 m at VGS = 10V, ID = 50 AG Typ Qg(tot) = 23.5 nC at VGS = 10V, ID = 50 A UIS CapabilityD RoHS CompliantG Qualified to AEC Q101D-PAKTO-252SS(TO-252)Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alt

8.1. Size:414K fairchild semi
fdd9411 f085.pdf

April 2015FDD9411_F085N-Channel PowerTrench MOSFET40 V, 15 A, 7.8 m Features Typical RDS(on) = 6.2 m at VGS = 10V, ID = 15 A D Typical Qg(tot) = 15 nC at VGS = 10V, ID = 15 A UIS Capability RoHS CompliantD Qualified to AEC Q101 GGApplications S Automotive Engine Control D-PAKTO-252S(TO-252) PowerTrain Management Solenoid and Motor Drivers Elec

8.2. Size:671K onsemi
fdd9411l-f085.pdf

FDD9411L-F085N-Channel Logic Level PowerTrench MOSFET40 V, 25 A, 7.0 mFeatures Typical RDS(on) = 5.6 m at VGS = 10V, ID = 20 AD Typical Qg(tot) = 18 nC at VGS = 10V, ID = 20 A UIS Capability RoHS CompliantD Qualified to AEC Q101 GGApplicationsS Automotive Engine Control D-PAKTO-252S(TO-252) PowerTrain Management Solenoid and Motor Drivers Electr

8.3. Size:468K onsemi
fdd9411-f085.pdf

FDD9411-F085N-Channel PowerTrench MOSFET40 V, 25 A, 7.8 mFeaturesD Typical RDS(on) = 6.2 m at VGS = 10V, ID = 15 A Typical Qg(tot) = 15 nC at VGS = 10V, ID = 15 A UIS CapabilityD RoHS CompliantGG Qualified to AEC Q101SApplicationsD-PAKTO-252 Automotive Engine Control S(TO-252) PowerTrain Management Solenoid and Motor Drivers Electronic Steerin

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: