BUK6D120-40E Todos los transistores

 

BUK6D120-40E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK6D120-40E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.9 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 27 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm
   Paquete / Cubierta: SOT1220
 

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BUK6D120-40E Datasheet (PDF)

 ..1. Size:283K  nxp
 buk6d120-40e.pdf pdf_icon

BUK6D120-40E

BUK6D120-40E40 V, N-channel Trench MOSFET29 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder ins

 5.1. Size:317K  nxp
 buk6d120-60p.pdf pdf_icon

BUK6D120-40E

BUK6D120-60P60 V, P-channel Trench MOSFET3 April 2018 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Extended temperature range Tj = 175 Side wettable flanks for optical s

 7.1. Size:284K  nxp
 buk6d125-60e.pdf pdf_icon

BUK6D120-40E

BUK6D125-60E60 V, N-channel Trench MOSFET29 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder ins

 9.1. Size:494K  nxp
 buk6d210-60e.pdf pdf_icon

BUK6D120-40E

BUK6D210-60E60 V, N-channel Trench MOSFET17 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder ins

MOSTRAR MÁS

Otros transistores... FDG6332C-F085 , FDMC010N08C , FDMC8010DC , FDMD8530 , FDMD8540L , FDMD8560L , 2N7002NXAK , 2N7002NXBK , SPP20N60C3 , BUK6D120-60P , BUK6D125-60E , BUK6D210-60E , BUK6D22-30E , BUK6D230-80E , BUK6D23-40E , BUK6D38-30E , BUK6D385-100E .

History: CHM6338JGP | CEM3258 | AON6816 | 2SK784

 

 
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