BUK9K20-80E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK9K20-80E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 68 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 23 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25.8 nS

Cossⓘ - Capacitancia de salida: 193 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0194 Ohm

Encapsulados: SOT1205

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BUK9K20-80E datasheet

 ..1. Size:263K  nxp
 buk9k20-80e.pdf pdf_icon

BUK9K20-80E

BUK9K20-80E Dual N-channel 80 V, 20 m logic level MOSFET 11 May 2018 Product data sheet 1. General description Dual Logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET AEC-Q101

 8.1. Size:305K  nxp
 buk9k29-100e.pdf pdf_icon

BUK9K20-80E

BUK9K29-100E Dual N-channel TrenchMOS logic level FET 28 March 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated

 8.2. Size:258K  nxp
 buk9k22-80e.pdf pdf_icon

BUK9K20-80E

BUK9K22-80E Dual N-channel 80 V, 22 m logic level MOSFET 11 May 2018 Product data sheet 1. General description Dual Logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET AEC-Q101

 8.3. Size:314K  nxp
 buk9k25-40e.pdf pdf_icon

BUK9K20-80E

BUK9K25-40E Dual N-channel 40 V, 29 m logic level MOSFET 10 December 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET Q10

MOSTRAR MÁS

Otros transistores... BUK7Y1R4-40H, BUK7Y1R7-40H, BUK7Y2R0-40H, BUK7Y2R5-40H, BUK7Y3R0-40H, BUK7Y3R5-40H, BUK9D23-40E, BUK9J0R9-40H, IRFZ44N, BUK9K22-80E, BUK9K30-80E, BUK9K5R1-30E, BUK9K5R6-30E, BUK9M10-30E, BUK9M11-40E, BUK9M11-40H, BUK9M120-100E