BUK9K22-80E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK9K22-80E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 64 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 21 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 24.9 nS
Cossⓘ - Capacitancia de salida: 170 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0217 Ohm
Paquete / Cubierta: SOT1205
Búsqueda de reemplazo de BUK9K22-80E MOSFET
BUK9K22-80E Datasheet (PDF)
buk9k22-80e.pdf

BUK9K22-80EDual N-channel 80 V, 22 m logic level MOSFET11 May 2018 Product data sheet1. General descriptionDual Logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard foruse in high performance automotive applications.2. Features and benefits Dual MOSFET AEC-Q101
buk9k29-100e.pdf

BUK9K29-100EDual N-channel TrenchMOS logic level FET28 March 2013 Product data sheet1. General descriptionDual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive avalanche rated
buk9k20-80e.pdf

BUK9K20-80EDual N-channel 80 V, 20 m logic level MOSFET11 May 2018 Product data sheet1. General descriptionDual Logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard foruse in high performance automotive applications.2. Features and benefits Dual MOSFET AEC-Q101
buk9k25-40e.pdf

BUK9K25-40EDual N-channel 40 V, 29 m logic level MOSFET10 December 2013 Product data sheet1. General descriptionDual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET Q10
Otros transistores... BUK7Y1R7-40H , BUK7Y2R0-40H , BUK7Y2R5-40H , BUK7Y3R0-40H , BUK7Y3R5-40H , BUK9D23-40E , BUK9J0R9-40H , BUK9K20-80E , IRF3205 , BUK9K30-80E , BUK9K5R1-30E , BUK9K5R6-30E , BUK9M10-30E , BUK9M11-40E , BUK9M11-40H , BUK9M120-100E , BUK9M12-60E .
History: STP5NK60Z | 6N60KL-TA3-T | 2SK2074 | AUIRFR2307ZTR | BRCS250N10SDP | 36N06 | SPW20N60C3
History: STP5NK60Z | 6N60KL-TA3-T | 2SK2074 | AUIRFR2307ZTR | BRCS250N10SDP | 36N06 | SPW20N60C3



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