BUK9K5R1-30E Todos los transistores

 

BUK9K5R1-30E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK9K5R1-30E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 68 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 32 nS
   Cossⓘ - Capacitancia de salida: 421 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: SOT1205
     - Selección de transistores por parámetros

 

BUK9K5R1-30E Datasheet (PDF)

 ..1. Size:724K  nxp
buk9k5r1-30e.pdf pdf_icon

BUK9K5R1-30E

BUK9K5R1-30EDual N-channel 30 V, 5.3 m logic level MOSFET2 September 2015 Product data sheet1. General descriptionDual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET Q

 7.1. Size:714K  nxp
buk9k5r6-30e.pdf pdf_icon

BUK9K5R1-30E

BUK9K5R6-30EDual N-channel 30 V, 5.8 m logic level MOSFET2 September 2015 Product data sheet1. General descriptionDual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET Q

 8.1. Size:250K  nxp
buk9k52-60e.pdf pdf_icon

BUK9K5R1-30E

BUK9K52-60EDual N-channel 60 V, 55 m logic level MOSFET24 February 2015 Product data sheet1. General descriptionDual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET Q101

 9.1. Size:336K  nxp
buk9k32-100e.pdf pdf_icon

BUK9K5R1-30E

BUK9K32-100EDual N-channel 100 V, 33 m logic level MOSFET10 December 2013 Product data sheet1. General descriptionDual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET Q1

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AM2336N-T1 | SMOS44N80 | CEF05N6

 

 
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