BUK9M10-30E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK9M10-30E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 55 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 54 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 22 nS
Cossⓘ - Capacitancia de salida: 201 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0078 Ohm
Paquete / Cubierta: SOT1210
Búsqueda de reemplazo de BUK9M10-30E MOSFET
BUK9M10-30E Datasheet (PDF)
buk9m10-30e.pdf

BUK9M10-30EN-channel 30 V, 10 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetit
buk9m12-60e.pdf

BUK9M12-60EN-channel 60 V, 12 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetit
buk9m15-60e.pdf

BUK9M15-60EN-channel 60 V, 15 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetit
buk9m14-40e.pdf

BUK9M14-40EN-channel 40 V, 14 m logic level MOSFET in LFPAK3313 May 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive av
Otros transistores... BUK7Y3R5-40H , BUK9D23-40E , BUK9J0R9-40H , BUK9K20-80E , BUK9K22-80E , BUK9K30-80E , BUK9K5R1-30E , BUK9K5R6-30E , IRF540 , BUK9M11-40E , BUK9M11-40H , BUK9M120-100E , BUK9M12-60E , BUK9M14-40E , BUK9M15-40H , BUK9M15-60E , BUK9M156-100E .
History: IXFE23N100 | DMN2056U | GP1M020A050N | SHD225505B | PJC7403 | HM60N06K | AM3474N
History: IXFE23N100 | DMN2056U | GP1M020A050N | SHD225505B | PJC7403 | HM60N06K | AM3474N



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