BUK9M24-60E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK9M24-60E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 55 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 32 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11.9 nS
Cossⓘ - Capacitancia de salida: 116 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.021 Ohm
Encapsulados: SOT1210
Búsqueda de reemplazo de BUK9M24-60E MOSFET
- Selecciónⓘ de transistores por parámetros
BUK9M24-60E datasheet
buk9m24-60e.pdf
BUK9M24-60E N-channel 60 V, 24 m logic level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetit
buk9m24-40e.pdf
BUK9M24-40E N-channel 40 V, 24 m logic level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetit
buk9m20-40h.pdf
BUK9M20-40H N-channel 40 V, 20.0 m logic level MOSFET in LFPAK33 29 January 2019 Product data sheet 1. General description Automotive qualified logic level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications. 2. Features and benefits Fully automotiv
buk9m28-80e.pdf
BUK9M28-80E N-channel 80 V, 28 m logic level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetit
Otros transistores... BUK9M14-40E, BUK9M15-40H, BUK9M15-60E, BUK9M156-100E, BUK9M17-30E, BUK9M19-60E, BUK9M20-40H, BUK9M24-40E, IRF3710, BUK9M28-80E, BUK9M34-100E, BUK9M35-80E, BUK9M3R3-40H, BUK9M42-60E, BUK9M43-100E, BUK9M4R3-40H, BUK9M53-60E
History: SSF80R500S | MTDN138ZS6R
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: CM4407 | CM3407 | CM3400 | SVF11N65F | SVF11N65T | FKBB3105 | EHBA036R1 | CRTT067N10N | AP6NA3R2MT | AP65SA145DDT8 | AP4NAR95CMT-A | AP4024GEMT-HF | AP3P050AH | AP3P020H | AP3N9R5YT | AP3N9R5MT
Popular searches
bd140 transistor | 2n2222a datasheet | bd136 | tl431 datasheet | 2sd526 | 2n4403 transistor equivalent | 2sc1318 | 2n3055 transistor equivalent
