BUK9M28-80E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK9M28-80E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 75 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 33 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17.7 nS

Cossⓘ - Capacitancia de salida: 131 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm

Encapsulados: SOT1210

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BUK9M28-80E datasheet

 ..1. Size:723K  nxp
 buk9m28-80e.pdf pdf_icon

BUK9M28-80E

BUK9M28-80E N-channel 80 V, 28 m logic level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetit

 8.1. Size:721K  nxp
 buk9m24-40e.pdf pdf_icon

BUK9M28-80E

BUK9M24-40E N-channel 40 V, 24 m logic level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetit

 8.2. Size:720K  nxp
 buk9m24-60e.pdf pdf_icon

BUK9M28-80E

BUK9M24-60E N-channel 60 V, 24 m logic level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetit

 8.3. Size:280K  nxp
 buk9m20-40h.pdf pdf_icon

BUK9M28-80E

BUK9M20-40H N-channel 40 V, 20.0 m logic level MOSFET in LFPAK33 29 January 2019 Product data sheet 1. General description Automotive qualified logic level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications. 2. Features and benefits Fully automotiv

MOSTRAR MÁS

Otros transistores... BUK9M15-40H, BUK9M15-60E, BUK9M156-100E, BUK9M17-30E, BUK9M19-60E, BUK9M20-40H, BUK9M24-40E, BUK9M24-60E, 10N60, BUK9M34-100E, BUK9M35-80E, BUK9M3R3-40H, BUK9M42-60E, BUK9M43-100E, BUK9M4R3-40H, BUK9M53-60E, BUK9M5R0-40H