BUK9M28-80E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK9M28-80E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 75 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 33 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 17.7 nS
Cossⓘ - Capacitancia de salida: 131 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
Paquete / Cubierta: SOT1210
Búsqueda de reemplazo de BUK9M28-80E MOSFET
BUK9M28-80E Datasheet (PDF)
buk9m28-80e.pdf

BUK9M28-80EN-channel 80 V, 28 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetit
buk9m24-40e.pdf

BUK9M24-40EN-channel 40 V, 24 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetit
buk9m24-60e.pdf

BUK9M24-60EN-channel 60 V, 24 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetit
buk9m20-40h.pdf

BUK9M20-40HN-channel 40 V, 20.0 m logic level MOSFET in LFPAK3329 January 2019 Product data sheet1. General descriptionAutomotive qualified logic level N-channel MOSFET in an LFPAK33 package using Trench 9TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in highperformance automotive applications.2. Features and benefits Fully automotiv
Otros transistores... BUK9M15-40H , BUK9M15-60E , BUK9M156-100E , BUK9M17-30E , BUK9M19-60E , BUK9M20-40H , BUK9M24-40E , BUK9M24-60E , IRFB4227 , BUK9M34-100E , BUK9M35-80E , BUK9M3R3-40H , BUK9M42-60E , BUK9M43-100E , BUK9M4R3-40H , BUK9M53-60E , BUK9M5R0-40H .
History: FQD12N20TM | IPC100N04S5-1R2 | 2SK2563 | EFC8811R | DH020N03F | LSE60R180HT | IRF3709ZS
History: FQD12N20TM | IPC100N04S5-1R2 | 2SK2563 | EFC8811R | DH020N03F | LSE60R180HT | IRF3709ZS



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