PMCM4401UPE MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMCM4401UPE

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 3.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 64 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.095 Ohm

Encapsulados: WLCSP4

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PMCM4401UPE datasheet

 ..1. Size:715K  nxp
 pmcm4401upe.pdf pdf_icon

PMCM4401UPE

PMCM4401UPE 20 V, P-channel Trench MOSFET 7 October 2016 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic D

 5.1. Size:263K  nxp
 pmcm4401une.pdf pdf_icon

PMCM4401UPE

PMCM4401UNE 20 V, N-channel Trench MOSFET 29 May 2017 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package 0.78 x 0.78 x 0.35 mm Trench MOSFET technology ElectroStatic Discha

 6.1. Size:318K  nxp
 pmcm4401vne.pdf pdf_icon

PMCM4401UPE

PMCM4401VNE 12V, N-channel Trench MOSFET 24 July 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic Disc

 6.2. Size:317K  nxp
 pmcm4401vpe.pdf pdf_icon

PMCM4401UPE

PMCM4401VPE 12 V, P-channel Trench MOSFET 29 July 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic Dis

MOSTRAR MÁS

Otros transistores... NX3008PBKMB, NX3020NAKS, NX3020NAKV, NX3020NAKW, NX6020CAKS, NX7002AKA, NX7002BKH, PMCM4401UNE, AO4407, PMCM4402UPE, PMCM6501UNE, PMCM6501UPE, PMCM6501VNE, PMCM650CUNE, PMCM950ENE, PMCXB1000UE, PMCXB900UEL