PMN40ENA Todos los transistores

 

PMN40ENA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMN40ENA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.652 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.2 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.043 Ohm
   Paquete / Cubierta: TSOP6
 

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PMN40ENA Datasheet (PDF)

 ..1. Size:301K  nxp
 pmn40ena.pdf pdf_icon

PMN40ENA

PMN40ENA60 V, N-channel Trench MOSFET11 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology AE

 7.1. Size:722K  nxp
 pmn40ene.pdf pdf_icon

PMN40ENA

PMN40ENE30 V, N-channel Trench MOSFET24 May 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Trench MOSFET technology Logic-level compatible Very fast switching Enhanced power dissipatio

 9.1. Size:274K  nxp
 pmn40upea.pdf pdf_icon

PMN40ENA

PMN40UPEA20 V, single P-channel Trench MOSFET19 June 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Low threshold voltage Fast switching Trench MOSFET technology 4 kV ESD protection

 9.2. Size:199K  nxp
 pmn40upe.pdf pdf_icon

PMN40ENA

PMN40UPE20 V, single P-channel Trench MOSFET13 August 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage Fast switching Trench MOSFET technology

MOSTRAR MÁS

Otros transistores... PMN25ENEA , PMN280ENEA , PMN28UNE , PMN30ENEA , PMN30UN , PMN30UNE , PMN30XP , PMN30XPE , EMB04N03H , PMN40ENE , PMN48XPA , PMN50EPE , PMN52XP , PMN55ENE , PMN55ENEA , PMN70EPE , PMN70XP .

History: SPB16N50C3 | 2P7154VC

 

 
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