PMPB15XPA Todos los transistores

 

PMPB15XPA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMPB15XPA
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 8.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 90 nS
   Cossⓘ - Capacitancia de salida: 570 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: SOT1220
 

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PMPB15XPA Datasheet (PDF)

 ..1. Size:298K  nxp
 pmpb15xpa.pdf pdf_icon

PMPB15XPA

PMPB15XPA12 V, P-channel Trench MOSFET27 March 2018 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks for

 6.1. Size:252K  nxp
 pmpb15xp.pdf pdf_icon

PMPB15XPA

PMPB15XP12 V, single P-channel Trench MOSFET22 November 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits 1.5 kV ESD protection (human body model) Tren

 7.1. Size:227K  nxp
 pmpb15xn.pdf pdf_icon

PMPB15XPA

PMPB15XN20 V, single N-channel Trench MOSFET13 September 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits Trench MOSFET technology Small and leadless

 9.1. Size:321K  nxp
 pmpb100xpea.pdf pdf_icon

PMPB15XPA

PMPB100XPEA20 V, P-channel Trench MOSFET13 November 2019 Product data sheet1. General DescriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Small and leadless ultra thin S

MOSTRAR MÁS

Otros transistores... PMPB10EN , PMPB10UP , PMPB10XNEA , PMPB12UNE , PMPB12UNEA , PMPB13UP , PMPB13XNEA , PMPB14XP , IRF640 , PMPB16EP , PMPB20XNEA , PMPB20XPEA , PMPB23XNEA , PMPB24EP , PMPB25ENE , PMPB27EPA , PMPB29XNEA .

History: AM1440N | MTP2311N3 | QM3001D | HM8N20I

 

 
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